Mobile unit and system for mobile unit

ABSTRACT

A mobile unit and a system for a mobile unit which can judge whether an oncoming car is emitting a high beam are provided. A mobile unit and a system for a mobile unit which include a first and a second sensors, a memory circuit, an arithmetic circuit, and a window portion. The first sensor is configured to sense the position of the eyes of a driver who is riding in the mobile unit. The second sensor is configured to sense whether an oncoming car is existing, whether the oncoming car is emitting a high beam, and a region that is to be irradiated with the high beam. The memory circuit is configured to store an irradiation distance of a high beam and a decrease rate of light transmittance of the window portion. The arithmetic circuit is configured to output, to the window portion, data on a region of the window portion in which the light transmittance is to be changed, on the basis of data sensed by the first sensor and the second sensor and data stored in the memory circuit. The window portion is configured to locally decrease the light transmittance on the basis of the data output from the arithmetic circuit.

TECHNICAL FIELD

One embodiment of the present invention relates to a mobile unit and asystem for a mobile unit.

Note that one embodiment of the present invention is not limited to theabove technical field. The technical field of the invention disclosed inthis specification and the like relates to an object, a method, or amanufacturing method. Furthermore, one embodiment of the presentinvention relates to a process, a machine, manufacture, or a compositionof matter. Therefore, specifically, a semiconductor device, a displaydevice, a light-emitting device, a power storage device, an imagingdevice, a memory device, a method for driving them, or a method formanufacturing them can be given as examples of the technical field ofone embodiment of the present invention disclosed in this specificationand the like.

BACKGROUND ART

A research on a system that assists driving of a car or the like isactive.

For example, Patent Document 1 discloses a method and a device whichreduces the glare perceived by an occupant, by appropriately controllingan antiglare device in accordance with the positional relationshipbetween a vehicle and a light source.

Specifically, an image of a region where the face of an occupant ispositioned is captured and the captured image is subjected to imageprocessing, so that a state in which the occupant perceives glare issensed. The antiglare device incorporated in the vehicle is controlledso as to reduce the glare perceived by an occupant when the occupant isin the state of perceiving glare.

REFERENCE Patent Document

-   [Patent Document 1] PCT International Publication No. 2013/108748

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

When driving at night, in the case where an oncoming car is emittinghigh beams, a driver may perceive glare owing to irradiation of thedriver's eyes with light with a high illumination. As a method forreducing glare in the case where an oncoming car is emitting high beams,a method of reducing light transmittance of a windshield or the like canbe given. However, when the light transmittance of an entire windshieldis decreased for example, the light transmittance of an area which isnot irradiated with high beams is also decreased, which may lower thefront visibility.

An object of one embodiment of the present invention is to provide amobile unit which can judge whether an oncoming car is emitting highbeams. Another object of one embodiment of the present invention is toprovide a mobile unit including a window portion in which lighttransmittance can be locally controlled. Another object of oneembodiment of the present invention is to provide a mobile unit whichcan reduce glare that a driver perceives from high beams emitted by anoncoming car. Another object of one embodiment of the present inventionis to provide a mobile unit which can prevent a reduction of visibilityeven in the case where an oncoming car is emitting high beams. Anotherobject of one embodiment of the present invention is to provide a mobileunit which can prevent drowsy driving. Another object of one embodimentof the present invention is to provide a mobile unit which can preventcollision with an obstacle. Another object of one embodiment of thepresent invention is to provide a low-cost mobile unit. Another objectof one embodiment of the present invention is to provide a mobile unitincluding a small sensor. Another object of one embodiment of thepresent invention is to provide a mobile unit including a transistorwhose change in electrical characteristics has low temperaturedependence.

Another object of one embodiment of the present invention is to providea novel mobile unit, a novel system for the mobile unit, or the like.

Note that the objects of one embodiment of the present invention are notlimited to the above-listed objects. The objects listed above do notpreclude the existence of other objects. The other objects are the onesthat are not described above and will be described below. The objectsthat are not described above will be derived from and can beappropriately extracted from the description of the specification, thedrawings, and the like by those skilled in the art. One embodiment ofthe present invention solves at least one of the above-listed objectsand/or the other objects.

Means for Solving the Problems

One embodiment of the present invention is a mobile unit including afirst sensor, a second sensor, a first circuit, an arithmetic circuit,and a window portion. The first sensor is configured to sense a positionof eyes of a driver who is riding in the mobile unit, the second sensoris configured to sense whether an oncoming car is existing, the secondsensor is configured to sense whether the oncoming car is emitting ahigh beam, the second sensor is configured to sense a region that is tobe irradiated with the high beam emitted by the oncoming car, the firstcircuit is configured to store an irradiation distance of a high beam,the first circuit is configured to store a decrease rate of lighttransmittance of the window portion in the case where the lighttransmittance is decreased, the arithmetic circuit is configured tooutput, to the window portion, data on a region of the window portion inwhich the light transmittance is to be changed, on the basis of datasensed by the first sensor and the second sensor and data stored in thefirst circuit, and the window portion is configured to locally decreasethe light transmittance on the basis of the data, which is output fromthe arithmetic circuit, on a region of the window portion in which thelight transmittance is to be changed.

One embodiment of the present invention is a mobile unit including afirst sensor, a second sensor, a first circuit, an arithmetic circuit,and a window portion. The first sensor is configured to output a firstsignal to the arithmetic circuit, the second sensor is configured tooutput a second signal to the arithmetic circuit, the second sensor isconfigured to output a third signal to the arithmetic circuit, thesecond sensor is configured to output a fourth signal to the arithmeticcircuit, the first circuit is configured to output a fifth signal to thearithmetic circuit, the first circuit is configured to output a sixthsignal to the arithmetic circuit, the arithmetic circuit is configuredto output a seventh signal to the window portion in accordance with thefirst to sixth signals, and the window portion is configured to locallydecrease light transmittance in accordance with the seventh signal. Thefirst signal comprises data on a position of eyes of a driver who isriding in the mobile unit, the second signal comprises data on whetheran oncoming car is existing, the third signal comprises data on whetherthe oncoming car is emitting a high beam, the fourth signal comprisesdata on a region that is to be irradiated with the high beam emitted bythe oncoming car, the fifth signal comprises data on an irradiationdistance of a high beam, the sixth signal comprises data on a decreaserate of the light transmittance in the case where the lighttransmittance is decreased, and the seventh signal comprises data on aregion of the window portion in which the light transmittance is to bechanged.

Furthermore, the first sensor may be provided inside the mobile unit,and the second sensor may be provided outside the mobile unit.

Furthermore, a dynamic range of the second sensor may be higher than adynamic range of the first sensor, and a frame frequency of the secondsensor may be higher than a frame frequency of the first sensor.

The first sensor may include a first imaging element, the second sensormay include a second imaging element, the first imaging element may beconfigured to operate by a rolling shutter method, and the secondimaging element may be configured to operate by a global shutter method.

The second sensor may include a pixel, the pixel may include aphotoelectric conversion element and first to fourth transistors, oneterminal of the photoelectric conversion element may be electricallyconnected to one of a source and a drain of the first transistor, theother of the source and the drain of the first transistor may beelectrically connected to one of a source and a drain of the secondtransistor, the one of the source and the drain of the second transistormay be electrically connected to a gate of the third transistor, one ofa source and a drain of the third transistor may be electricallyconnected to one of a source and a drain of the fourth transistor, thefirst transistor and the second transistor may include an oxidesemiconductor in their channel formation regions, and the oxidesemiconductor may include In, Zn, and M (M is Al, Ga, Y, or Sn).

Effect of the Invention

One embodiment of the present invention can provide a mobile unit whichcan judge whether an oncoming car is emitting high beams. One embodimentof the present invention can provide a mobile unit including a windowportion in which light transmittance can be locally controlled. Oneembodiment of the present invention can provide a mobile unit which canreduce glare that a driver perceives from high beams emitted by anoncoming car. One embodiment of the present invention can provide amobile unit which can prevent a reduction of visibility even in the casewhere an oncoming car is emitting high beams. One embodiment of thepresent invention can provide a mobile unit which can prevent drowsydriving. One embodiment of the present invention can provide a mobileunit which can prevent collision with an obstacle. One embodiment of thepresent invention can provide a low-cost mobile unit. One embodiment ofthe present invention can provide a mobile unit including a smallsensor. One embodiment of the present invention can provide a mobileunit including a transistor whose change in electrical characteristicshas low temperature dependence.

One embodiment of the present invention can provide a novel mobile unit,a novel system for the mobile unit, or the like.

Note that the effects of one embodiment of the present invention are notlimited to the above-listed effects. The effects listed above do notpreclude the existence of other effects. The other effects are the onesthat are not described above and will be described below. The effectsthat are not described above will be derived from and can beappropriately extracted from the description of the specification, thedrawings, and the like by those skilled in the art. One embodiment ofthe present invention has at least one of the above-listed effectsand/or the other effects. Therefore, one embodiment of the presentinvention does not have the above-described effects in some cases.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A-1B Block diagrams illustrating structure examples of a mobileunit.

FIGS. 2A-2B Views illustrating a high beam and a low beam.

FIG. 3 A flowchart illustrating an example of operation.

FIG. 4 A view for illustrating an example of operation.

FIG. 5 A view for illustrating an example of operation.

FIG. 6 A view for illustrating an example of operation.

FIG. 7 A view for illustrating an example of operation.

FIG. 8 A block diagram of an imaging element.

FIGS. 9A-9C Views for illustrating structure examples of a liquidcrystal panel.

FIGS. 10A-10B Views for illustrating usage examples of a liquid crystalpanel.

FIG. 11 A view for illustrating a usage example of a liquid crystalpanel.

FIG. 12 A block diagram illustrating a structure example of an imagingdevice.

FIGS. 13A-13B Views for illustrating a global shutter and a rollingshutter operation.

FIG. 14 A view illustrating a pixel circuit.

FIGS. 15A-15B Views illustrating pixel circuits.

FIGS. 16A-16C Views illustrating pixel circuits.

FIG. 17 A view illustrating an operation of a pixel circuit.

FIGS. 18A-18B Views illustrating pixel circuits.

FIGS. 19A-19B Views for illustrating examples of a sensor installationposition.

FIG. 20 A view for illustrating an example of a sensor installationposition.

FIGS. 21A-21C Views for illustrating examples of a sensor installationposition.

FIGS. 22A-22C A view for illustrating an example of operation and viewsfor illustrating examples of a sensor installation position.

FIG. 23 A view for illustrating an example of operation.

FIGS. 24A-24B Views illustrating calculation of an eye-closed rate.

FIGS. 25A-25B A view for illustrating an example of operation and ablock diagram illustrating a structure example of a mobile unit.

FIG. 26 A flowchart illustrating an example of operation.

FIG. 27 A view illustrating pixels of an imaging element.

FIGS. 28A-28E Views illustrating structures of a photoelectricconversion element.

FIGS. 29A-29C Views illustrating connection structures of aphotoelectric conversion element and a transistor.

FIGS. 30A-30C Atop view and cross-sectional views illustrating atransistor.

FIGS. 31A-31C Atop view and cross-sectional views illustrating atransistor.

FIGS. 32A-32C A top view and cross-sectional views illustrating atransistor.

FIGS. 33A-33C Atop view and cross-sectional views illustrating atransistor.

FIGS. 34A-34C A top view and cross-sectional views illustrating atransistor.

FIGS. 35A-35C Atop view and cross-sectional views illustrating atransistor.

FIGS. 36A-36C Atop view and cross-sectional views illustrating atransistor.

FIGS. 37A-37H Top views and cross-sectional views illustratingtransistors.

FIGS. 38A-38C Views illustrating ranges of the atomic ratio of oxidesemiconductors.

FIG. 39 A view illustrating an InMZnO₄ crystal.

FIGS. 40A-40B Band diagrams of stacked structures of oxidesemiconductors.

FIGS. 41A-41D Views illustrating examples of a mobile unit.

MODE FOR CARRYING OUT THE INVENTION

Hereinafter, one embodiment of the present invention will be describedwith reference to drawings. However, one embodiment of the presentinvention can be implemented in many different modes, and it will bereadily appreciated by those skilled in the art that modes and detailscan be changed in various ways without departing from the spirit andscope of the present invention. Thus, the present invention should notbe interpreted as being limited to the following description.

In this specification and the like, ordinal numbers such as “first”,“second”, and “third” are used in order to avoid confusion amongcomponents. Thus, the terms do not limit the number of components.Furthermore, the terms do not limit the order of components.

The same elements or elements having similar functions, elements formedusing the same material, elements formed at the same time, or the likein the drawings are denoted by the same reference numerals, and thedescription thereof is not repeated in some cases.

In this specification and the like, terms for explaining arrangement,such as “over” and “under”, are used for convenience to describe thepositional relation between components with reference to drawings. Thepositional relation between components is changed as appropriate inaccordance with a direction in which the components are described.Therefore, the terms for explaining arrangement are not limited to thoseused in this specification and may be changed to other terms asappropriate depending on the situation.

The term “over” or “below” does not necessarily show that a component isplaced directly on or directly below and directly in contact withanother component. For example, the expression “electrode B overinsulating layer A” does not necessarily mean that the electrode B is onand in direct contact with the insulating layer A and does not excludethe case where another component is provided between the insulatinglayer A and the electrode B.

Furthermore, in a block diagram in this specification and the like,components are functionally classified and shown by blocks that areindependent from each other. However, in an actual circuit and the like,such components are sometimes hard to classify functionally, and therecan be a case in which one circuit is concerned with a plurality offunctions or a case in which a plurality of circuits are concerned withone function. Therefore, blocks in a block diagram do not necessarilyshow components described in the specification and can show componentsexpressed with another term as appropriate depending on the situation.

In drawings, the size, the layer thickness, or the region is determinedarbitrarily for description convenience. Therefore, it is not limited tothe illustrated scale. Note that the drawings are schematically shownfor clarity, and shapes, values, or the like are not limited to thoseshown in the drawings. For example, the following can be included: avariation in signal, voltage, or current due to noise, a variation insignal, voltage, or current due to a difference in timing, or the like.

In drawings such as top views (also referred to as plan views or layoutviews), perspective views, some of components might not be illustratedfor clarity of the drawings.

In this specification and the like, the terms “one of a source and adrain” (or a first electrode or a first terminal) is used to denote oneof a source and a drain, and the term “the other of the source and thedrain” (or a second electrode or a second terminal) is used to denotethe other of the source and the drain in describing the connectionrelation of a transistor. This is because a source and a drain of atransistor are interchangeable depending on the structure, operationconditions, or the like of the transistor. Note that the source or thedrain of the transistor can also be referred to as a source (or drain)terminal, a source (or drain) electrode, or the like as appropriatedepending on the situation.

In addition, in this specification and the like, the term such as an“electrode” or a “wiring” does not limit a function of the component.For example, an “electrode” is used as part of a “wiring” in some cases,and vice versa. Further, the term “electrode” or “wiring” can also meana combination of a plurality of “electrodes” and “wirings” formed in anintegrated manner.

In this specification and the like, voltage and potential can bereplaced with each other as appropriate. Voltage refers to a potentialdifference from a reference potential. When the reference potential is aground voltage, for example, voltage can be replaced with potential. Theground potential does not necessarily mean 0 V. Potentials are relativevalues, and the potential applied to a wiring or the like is changeddepending on the reference potential, in some cases.

In this specification and the like, the terms such as “film” and “layer”can be interchanged with each other depending on the case orcircumstances. For example, the term “conductive layer” can be changedinto the term “conductive film” in some cases. Also, the term“insulating film” can be changed into the term “insulating layer” insome cases.

In this specification and the like, a switch is something that becomesin a conducting state (on state) or a non-conducting state (off state)and has a function of determining whether a current flows therethroughor not. Moreover, a switch is something that has a function of selectingand changing a current path.

For example, an electrical switch, a mechanical switch, or the like canbe used. That is, any element can be used as a switch as long as it cancontrol a current, without limitation to a certain element.

Examples of the electrical switch are a transistor (e.g., a bipolartransistor or a MOS transistor), a diode (e.g., a PN diode, a PIN diode,a Schottky diode, a MIM (Metal Insulator Metal) diode, a MIS (MetalInsulator Semiconductor) diode, or a diode-connected transistor), alogic circuit in which such elements are combined, and the like.

In the case of using a transistor as a switch, a “conducting state” ofthe transistor refers to a state in which a source and a drain of thetransistor are electrically short-circuited. Furthermore, a“non-conducting state” of the transistor refers to a state in which thesource and the drain of the transistor are electrically disconnected. Inthe case where a transistor operates just as a switch, the polarity(conductivity type) of the transistor is not particularly limited to acertain type.

An example of a mechanical switch is a switch formed using a MEMS (microelectro mechanical system) technology, such as a digital micromirrordevice (DMD). Such a switch includes an electrode which can be movedmechanically, and the movement of the electrode controls conduction andnon-conduction in operation.

In this specification and the like, the channel length refers to, forexample, a distance between a source and a drain in a region where asemiconductor (or a portion where a current flows in a semiconductorwhen a transistor is on) and a gate overlap with each other or a regionwhere a channel is formed in a top view of the transistor.

In one transistor, channel lengths in all regions are not necessarilythe same. In other words, the channel length of one transistor is notfixed to one value in some cases. Therefore, in this specification, thechannel length is any one of values, the maximum value, the minimumvalue, or the average value in a region where a channel is formed.

In this specification and the like, the channel width refers to, forexample, the length of a portion where a source and a drain face eachother in a region where a semiconductor (or a portion where a currentflows in a semiconductor when a transistor is on) and a gate electrodeoverlap with each other or a region where a channel is formed.

In one transistor, channel widths in all regions are not necessarily thesame. In other words, the channel width of one transistor is not fixedto one value in some cases. Therefore, in this specification, thechannel width is any one of values, the maximum value, the minimumvalue, or the average value in a region where a channel is formed.

In this specification and the like, a pixel refers to one element whosebrightness can be controlled, for example. Therefore, for example, onepixel expresses one color element by which brightness is expressed.Accordingly, in the case of a color display device formed of colorelements of R (red), G (green), and B (blue), the smallest unit of animage is formed of three pixels of an R pixel, a G pixel, and a B pixel.

Note that the number of color elements is not limited to three, and morecolor elements may be used. For example, RGBW (W: white), RGB added withyellow, cyan, or magenta, and the like may be employed.

In this specification and the like, when it is described that A and Bare connected to each other, the case where A and B are electricallyconnected to each other is included in addition to the case where A andB are directly connected to each other. Here, when it is described thatA and B are electrically connected to each other, it refers to the casewhere electric signals can be transmitted and received between A and Bwhen an object having any electric action exists between A and B.

Note that, for example, the case where a source (or a first terminal orthe like) of a transistor is electrically connected to X through (or notthrough) Z1 and a drain (or a second terminal or the like) of thetransistor is electrically connected to Y through (or not through) Z2,or the case where a source (or a first terminal or the like) of atransistor is directly connected to one part of Z1 and another part ofZ1 is directly connected to X while a drain (or a second terminal or thelike) of the transistor is directly connected to one part of Z2 andanother part of Z2 is directly connected to Y, can be expressed by usingany of the following expressions.

Examples of the expressions include “X, Y, and a source (or a firstterminal or the like) and a drain (or a second terminal or the like) ofa transistor are electrically connected to each other, and X, the source(or the first terminal or the like) of the transistor, the drain (or thesecond terminal or the like) of the transistor, and Y are electricallyconnected to each other in this order.” Examples of the expressionsinclude “a source (or a first terminal or the like) of a transistor iselectrically connected to X, a drain (or a second terminal or the like)of the transistor is electrically connected to Y, and X, the source (orthe first terminal or the like) of the transistor, the drain (or thesecond terminal or the like) of the transistor, and Y are electricallyconnected to each other in this order.” Examples of the expressionsinclude “X is electrically connected to Y through a source (or a firstterminal or the like) and a drain (or a second terminal or the like) ofa transistor, and X, the source (or the first terminal or the like) ofthe transistor, the drain (or the second terminal or the like) of thetransistor, and Y are provided to be connected in this order.” When theconnection order in a circuit configuration is defined by an expressionsimilar to the above examples, a source (or a first terminal or thelike) and a drain (or a second terminal or the like) of a transistor canbe distinguished from each other to specify the technical scope.

Other examples of the expressions include “a source (or a first terminalor the like) of a transistor is electrically connected to X through atleast a first connection path, the first connection path does notinclude a second connection path, the second connection path is a paththrough the transistor which is between the source (or the firstterminal or the like) of the transistor and a drain (or a secondterminal or the like) of the transistor, the first connection path is apath through Z1, the drain (or the second terminal or the like) of thetransistor is electrically connected to Y through at least a thirdconnection path, the third connection path does not include the secondconnection path, and the third connection path is a path through Z2.”Another example of the expressions is “a source (or a first terminal orthe like) of a transistor is electrically connected to Xat least with afirst connection path through Z1, the first connection path does notinclude a second connection path, the second connection path includes aconnection path through the transistor, a drain (or a second terminal orthe like) of the transistor is electrically connected to Y at least witha third connection path through Z2, and the third connection path doesnot include the second connection path.” Still another example of theexpressions is “a source (or a first terminal or the like) of atransistor is electrically connected to X at least with a firstelectrical path through Z1, the first electrical path does not include asecond electrical path, the second electrical path is an electrical pathfrom the source (or the first terminal or the like) of the transistor toa drain (or a second terminal or the like) of the transistor, the drain(or the second terminal or the like) of the transistor is electricallyconnected to Y at least with a third electrical path through Z2, thethird electrical path does not include a fourth electrical path, and thefourth electrical path is an electrical path from the drain (or thesecond terminal or the like) of the transistor to the source (or thefirst terminal or the like) of the transistor.” When the connection pathin a circuit configuration is defined by an expression similar to theabove examples, a source (or a first terminal or the like) and a drain(or a second terminal or the like) of a transistor can be distinguishedfrom each other to specify the technical scope.

Note that these expressions are examples and there is no limitation onthe expression. Here, X, Y, Z1, and Z2 each denote an object (e.g., adevice, an element, a circuit, a wiring, an electrode, a terminal, aconductive film, and a layer).

Embodiment 1

In this embodiment, a mobile unit and a system for the mobile unit ofone embodiment of the present invention will be described with referenceto drawings.

FIG. 1(A) is a block diagram illustrating a structure example of themobile unit and the system for the mobile unit of one embodiment of thepresent invention. A mobile unit 100 includes a control circuit 101, awindow portion 102, a sensor 103, and a sensor 104. The control circuit101 includes a sensor circuit 111, a memory circuit 112, and anarithmetic circuit 113.

The mobile unit 100 corresponds to a vehicle running at nighttime, forexample. Examples of the mobile unit are an automobile, a bus, a train,and the like. Unless otherwise noted below, the description is given onthe assumption that the mobile unit is an automobile.

The window portion 102 has a function of locally controlling thetransmittance of light which passes through the window portion 102. Forexample, the window portion 102 has a function of decreasing the lighttransmittance of only a region between a region that is being irradiatedwith light with more than or equal to a certain illumination and theeyes of a driver who is riding in the mobile unit 100. Note that awindshield can be used as the window portion 102, for example.Furthermore, the light with a certain illumination can be light with anillumination from which a person perceives glare when the eyes of theperson are irradiated with the light, for example.

The control circuit 101 has a function of outputting a signal S_(TR)that is for changing the light transmittance in the window portion 102.The signal S_(TR) includes data on a region of the window portion 102 inwhich the light transmittance is to be changed.

The window portion 102 is provided with an element having a function ofchanging the light transmittance in response to the signal S_(TR). Forexample, the window portion 102 can have a structure including glassprovided with a liquid crystal. Alternatively, the window portion 102can have a structure in which glass provided with a liquid crystal isattached to a window pane. The window portion 102 has a function ofchanging the light transmittance by the control of the alignment stateof the liquid crystal.

The sensor 103 has a function of sensing an object and outputting asignal to the arithmetic circuit 113. For example, the sensor 103 has afunction of sensing the position of the eyes of the driver who is ridingin the mobile unit 100 and outputting a signal S_(EYE) including data onthe position to the arithmetic circuit 113.

The sensor 104 has a function of sensing an object and outputting asignal to the arithmetic circuit 113. Furthermore, the sensor 104 has afunction of sensing the illumination of light and outputting a signal tothe arithmetic circuit 113. For example, the sensor 104 has a functionof sensing an oncoming car and outputting a signal S_(OC) including dataon the oncoming car to the arithmetic circuit 113. Note that the signalS_(OC) includes data on whether an oncoming car is existing, data on thedistance between the mobile unit 100 and the oncoming car, and the like,for example.

Furthermore, for example, the sensor 104 has a function of sensing thestate of light emitted by an oncoming car and outputting a signal S_(HL)to the arithmetic circuit 113. Here, sensing the state of light emittedby an oncoming car means sensing whether the oncoming car is emitting isemitting high beams, for example.

Moreover, for example, the sensor 104 has a function of sensing a regionthat is to be irradiated with high beams emitted by an oncoming car andoutputting a signal S_(HB) including data on the region to thearithmetic circuit 113. Note that the region that is to be irradiatedwith the high beams can be determined from the position or the like ofheadlights of the oncoming car, which is sensed by the sensor 104, forexample.

In this specification and the like, irradiation with high beams meansirradiation with light derived from high beams with more than or equalto a certain illumination. Here, the certain illumination can be anillumination from which a person perceives glare when the eyes of theperson are irradiated, for example.

Although the signal S_(OC), the signal S_(HL), and the signal S_(HB) areall output from the sensor 104 in FIG. 1(A), the signal S_(OC) and thesignal S_(HB) may be output from the sensor 104, and the signal S_(HL)may be output from a sensor 105 as illustrated in FIG. 1(B), forexample. In this case, the region that is to be irradiated with highbeams emitted by an oncoming car can be, for example, determined fromthe position of headlights of the oncoming car, which is sensed by thesensor 104, as described above, so that the sensor 104 can be a sensorwhich senses only an object. Furthermore, the sensor 105 can be a sensorwhich senses only the illumination of light.

A method for sensing whether an oncoming car is emitting high beams willbe described. FIG. 2(A) illustrates a situation in which a headlight 131of an oncoming car 130 is emitting a high beam 132. FIG. 2(B)illustrates a situation in which the headlight 131 of the oncoming car130 is emitting a low beam 133. Note that the high beam 132 and the lowbeam 133 illustrated in FIGS. 2(A), (B) or the like represent a regionwith more than or equal to a certain illumination, e.g., a region thatis being irradiated with light with an illumination from which a personperceives glare when the eyes of the person are irradiated with thelight.

In FIGS. 2(A), (B), a position P1 represents the position of theheadlight 131, and a position P2 represents a location that is a certaindistance x away from the position P1. In addition, a height y1represents a height from a road surface 134 on which the oncoming car130 is running to the headlight 131 at the position P1. A height y2represents a height from the road surface 134 to the high beam 132 orthe low beam 133 at the position P2. Note that specifically, the heighty2 can be a height from the road surface 134 to a point at which theillumination of light becomes a certain illumination or lower at theposition P2. In this case, at the position P2, places at and above theheight y2 are being irradiated with light with an illumination fromwhich a person does not perceive glare, and places below the height y2are being irradiated with light with an illumination from which a personperceives glare.

As illustrated in FIGS. 2(A), (B), irradiation with the high beam 132 isdirected more upward than the irradiation with the low beam 133.Accordingly, the height y1 and the height y2 are measured with thesensor 104, the sensor 105, or the like. In the case where the valueobtained by subtracting the height y1 from the height y2 is more than orequal to a previously designated prescribed value, the headlight 131 ofthe oncoming car 130 can be judged as emitting the high beam 132.Furthermore, in the case where the value obtained by subtracting theheight y1 from the height y2 is less than the previously designatedprescribed value or is a negative value, the headlight 131 of theoncoming car 130 can be judged as emitting the low beam 133.

Note that a value obtained by dividing the difference between the heighty2 and the height y1 by the distance x, that is, (y2−y1)/x, may be usedfor judging whether light that is being emitted by the headlight 131 ofthe oncoming car 130 is the high beam 132. Specifically, in the casewhere (y2−y1)/x is more than or equal to a previously designatedprescribed value, the headlight 131 of the oncoming car 130 can bejudged as emitting the high beam 132. Furthermore, in the case where(y2−y1)/x is less than the previously designated prescribed value or isa negative value, the headlight 131 of the oncoming car 130 can bejudged as emitting the low beam 133. By the above-described method,whether light that is being emitted by the headlight 131 of the oncomingcar 130 is the high beam 132 can be judged correctly.

The sensor circuit 111 has a function of outputting a signal S_(VRE)including data on a relative velocity V_(RE) between the mobile unit 100and an oncoming car ahead of the mobile unit 100 to the arithmeticcircuit 113. Note that when the velocity of the mobile unit 100 is V andthe velocity of the oncoming car is V′ for example, the relativevelocity V_(RE) is represented by V+V′.

For example, the sensor circuit 111 can calculate an average of therecent relative velocities V_(RE) and output the average as the signalS_(VRE) to the arithmetic circuit 113.

The memory circuit 112 has a function of storing a time T_(TR) spent inchanging the light transmittance of the window portion 102 andoutputting a signal S_(TTR) including data on the stored T_(TR) to thearithmetic circuit 113. The time T_(TR) can be, for example, a timenecessary for a driver to adapt to a change in the light transmittanceof the window portion 102. The time T_(TR) can be, for example, a timenecessary for preventing a driver from perceiving a sudden darkness ofthe outside scenery.

Furthermore, the time T_(TR) may be 0. In this case, the lighttransmittance of the window portion 102 can be kept high until justbefore the eyes of a driver are irradiated with high beams emitted by anoncoming car. After the oncoming car has passed and the irradiation ofthe eyes of the driver with the high beams has stopped, the lighttransmittance of the window portion 102 can be increased to an originalvalue immediately. Note that the time required to decrease the lighttransmittance of the window portion 102 and the time for returning thedecreased transmittance may be different from each other. For example,the light transmittance of the window portion 102 may be decreasedslowly, and the decreased transmittance may be returned quickly.

Note that in the case where the time T_(TR) is 0, the relative velocityV_(RE) is not necessarily sensed. In this case, the control circuit 101can have a structure not including the sensor circuit 111. Moreover, inthe case where the time T_(TR) is 0 for example, the memory circuit 112does not necessarily have a function of outputting the signal S_(TTR).

In this specification and the like, irradiating the eyes of a driverwith high beams means irradiating the eyes of the driver with lightderived from high beams with more than or equal to a certainillumination. Here, the certain illumination can be an illumination fromwhich a driver perceives glare when the eyes of the driver areirradiated, for example.

Furthermore, the memory circuit 112 has a function of storing anirradiation distance D_(HB) of high beams and outputting a signalS_(DHB) including data on the irradiation distance D_(HB) to thearithmetic circuit 113. Note that the irradiation distance D_(HB) canbe, for example, 100 m.

Furthermore, the memory circuit 112 has a function of storing a decreaserate R_(D) of transmittance in the case of decreasing the lighttransmittance of the window portion 102, and outputting a signal S_(RD)including data on the decrease rate R_(D) to the arithmetic circuit 113.The decrease rate R_(D) is preferably set so that a driver riding in themobile unit 100 will not perceive glare of high beams. In addition, inorder to suppress the decrease in visibility as much as possible, thedecrease rate R_(D) is preferably set as small as possible so that adriver will not perceive glare of high beams.

Note that the time T_(TR), the irradiation distance D_(HB), and thedecrease rate R_(D) may be predetermined values, or may be decreased onthe basis of signals or the like output from the sensor 103, the sensor104, the sensor 105, and the sensor circuit 111. In the case where thetime T_(TR), the irradiation distance D_(HB), and the decrease rateR_(D) are predetermined, a rewritable storage medium is preferably usedas the memory circuit 112. For example, as the memory circuit 112, arewritable nonvolatile memory such as a hard disk or a flash memory canbe used.

The arithmetic circuit 113 has a function of outputting the signalS_(TR) to the window portion 102 in accordance with the signal S_(EYE),the signal S_(OC), the signal S_(HL), the signal S_(HB), the signalS_(VRE), the signal S_(TTR), the signal S_(DHB), the signal S_(RD), andthe like described above. Since the arithmetic circuit 113 obtains thesignal S_(TR) on the basis of the plurality of signals, it is preferablya signal processing circuit such as a microcomputer.

As described above, the signal S_(TR) includes data on a region of thewindow portion 102 in which light transmittance is to be changed. Forexample, from the signal S_(HB) and the signal S_(EYE), the arithmeticcircuit 113 calculates a region between a region that is beingirradiated with high beams emitted by an oncoming car at the time ofobtaining the signal S_(HB) and the eyes of the driver who is riding inthe mobile unit 100. In addition, from the signal S_(HB), the relativevelocity V_(RE), and the like, a region which is irradiated with highbeams emitted by the oncoming car at the time when time T_(R) has passedsince the obtainment of the signal S_(HB) is calculated. Furthermore,from this region and the signal S_(EYE), a region between the regionwhich is irradiated with high beams emitted by the oncoming car and theeyes of the driver who is riding in the mobile unit 100 at the time whenthe time T_(R) has passed since the obtainment of the signal S_(HB) iscalculated. Then, the signal S_(TR) including data on theabove-described two regions can be output to the window portion 102.This can make it possible to decrease the transmittance of the windowportion 102 in only a region between the region irradiated with highbeams emitted by the oncoming car and the eyes of the driver who isriding in the mobile unit 100. Accordingly, the glare perceived by thedriver riding in the mobile unit 100 can be reduced, and in addition, areduction in visibility can be suppressed more than the case ofdecreasing the transmittance over the entire window portion 102.

Note that the mobile unit 100 may have a function of allowing a driverto arbitrarily adjust the region of the window portion 102 in whichlight transmittance is decreased.

Moreover, the signal S_(TR) can be a signal which gradually changes thelight transmittance of the window portion 102 over the time T_(TR).Specifically, in the case where the light transmittance of the windowportion 102 is gradually decreased from 100% to 50%, the transmittancecan be controlled so as to continuously change, in such a manner that itchanges to 99%, then to 98%.

The mobile unit and the system for the mobile unit of one embodiment ofthe present invention can be configured to decrease the lighttransmittance of the window portion 102 in the case where an oncomingcar is emitting high beams for example, and not to decrease the lighttransmittance of the window portion 102 in the case where an oncomingcar is emitting low beams for example. Furthermore, even in the casewhere an oncoming car is emitting high beams, for example, the lighttransmittance of the window portion 102 can be decreased only in theregion between the region irradiated with high beams and the eyes of thedriver who is riding in the mobile unit 100. In the case where the lightthat is being emitted by the oncoming car is the low beam 133 forexample, the driver riding in the mobile unit 100 perceives glare lessthan the case where the light is a high beam. Accordingly, with themobile unit and the system for the mobile unit of one embodiment of thepresent invention, the glare a driver riding in the mobile unit 100perceives from high beams can be reduced, and in addition, a reductionin visibility in the case where high beams are not being emitted can besuppressed, for example. Moreover, even in the case where high beams arebeing emitted, a reduction in visibility can be suppressed more than thecase of decreasing the transmittance over the entire window portion 102.

Next, an operation example of the mobile unit 100 having the structureillustrated in FIG. 1(A) will be described with reference to a flowchartillustrated in FIG. 3.

In Step S01, the arithmetic circuit 113 obtains data on an oncoming carfrom the sensor 104. This data is output from the sensor 104 to thearithmetic circuit 113 as the signal S_(OC) as described above. Notethat the signal S_(OC) includes, as described above, data as to whetheran oncoming car is existing, data on the distance between the mobileunit 100 and an oncoming car, and the like.

In Step S02, the arithmetic circuit 113 judges whether an oncoming caris sensed on the basis of the signal S_(OC). In the case where anoncoming car has not been sensed, a return to Step S01 is made and thearithmetic circuit 113 obtains data on an oncoming car from the sensor104 again. In the case where an oncoming car has been sensed, go to StepS03.

In Step S03, the arithmetic circuit 113 obtains data on the state oflight that is being emitted by the oncoming car from the sensor 104. Thedata is output to the arithmetic circuit 113 as the signal S_(HL) asdescribed above. Thus, whether the oncoming car is emitting high beamscan be judged.

In Step S04, the arithmetic circuit 113 judges whether the oncoming caris emitting high beams on the basis of the signal S_(HL). In the casewhere the oncoming car is not emitting high beams, a return to Step S01is made. In the case where the oncoming car is emitting high beams, goto Step S05.

In Step S05, the arithmetic circuit 113 obtains data on the time T_(TR)spent in decreasing the transmittance of the window portion 102 and theirradiation distance D_(HB) of the high beams, from the memory circuit112. As described above, the data on the time T_(TR) is output to thearithmetic circuit 113 as the signal S_(TTR), and the data on theirradiation distance D_(HB) is output to the arithmetic circuit 113 asthe signal S_(DHB).

In Step S06, the arithmetic circuit 113 obtains data on the relativevelocity V_(RE) of the oncoming car seen from the mobile unit 100, fromthe sensor circuit 111. As described above, the data is output to thearithmetic circuit 113 as the signal S_(VRE).

In Step S07, the arithmetic circuit 113 calculates time T_(FLAG) whichis taken until high beams emitted by the oncoming car reaches the eyesof the driver who is riding in the mobile unit 100, from the irradiationdistance D_(HB), the relative velocity V_(RE), data on the distancebetween the mobile unit 100 and the oncoming car included in the signalS_(OC), and the like.

In Step S08, the time T_(FLAG) calculated in Step S07 and the timeT_(TR) obtained in Step S05 are compared. In the case where the timeT_(FLAG) is longer than the time T_(TR), a return to Step S06 is made toobtain data on the relative velocity V_(RE) of the oncoming car seenfrom the mobile unit 100 again. In this case, the sensor 104 may obtainthe signal S_(OC) again and output the signal to the arithmetic circuit113. Accordingly, the distance between the mobile unit 100 and theoncoming car can be measured again. This allows a more precisecalculation of the time T_(FLAG).

In the case where T_(FLAG) is shorter than or equal to T_(TR), go toStep S09. In Step S09, the arithmetic circuit 113 obtains data on thedecrease rate R_(D) of transmittance of the window portion 102. The datais output to the arithmetic circuit 113 as the signal S_(RD) asdescribed above.

In Step S10, the sensor 103 senses the eyes of the driver who is ridingin the mobile unit 100. Then, the arithmetic circuit 113 obtains data onthe position of the eyes of the driver who is riding in the mobile unit100, from the sensor 103. The data is output to the arithmetic circuit113 as the signal S_(EYE) as described above. Furthermore, thearithmetic circuit 113 obtains data on a region that is to be irradiatedwith high beams emitted by the oncoming car, from the sensor 104. Thedata is output to the arithmetic circuit 113 as the signal S_(HB) asdescribed above. Note that as described above, for example, headlightsof the oncoming car are sensed by the sensor 104, and from the positionof the headlights, data on the region that is to be irradiated with highbeams emitted by the oncoming car can be obtained.

In Step S11, the arithmetic circuit 113 calculates a region of thewindow portion 102 in which light transmittance is to be decreased, fromthe relative velocity V_(RE), the signal S_(EYE) and the signal S_(HB)obtained in Step S10, and the like. The data on the region is output tothe window portion 102 as the signal S_(TR) as described above. Theregion of the window portion 102 in which light transmittance is to bedecreased can be, for example, a region between the region irradiatedwith high beams emitted by the oncoming car and the eyes of the driverwho is riding in the mobile unit 100 at any of the times from the timeof obtaining the signal S_(HB) to the time when the time T_(R) haspassed from the obtainment of the signal S_(HB). Furthermore, a regionin the vicinity of the above-described region can also be included inthe region of the window portion 102 in which light transmittance is tobe decreased.

In Step S12, the light transmittance of the window portion 102 in theregion calculated in Step S11 is decreased by the decrease rate R_(D)obtained in Step S09. Moreover, in the case where the region other thanthe region calculated in Step S11 in the window portion 102 has adecreased light transmittance, the light transmittance of the windowportion 102 in that region is returned to the original lighttransmittance.

In Step S13, the arithmetic circuit 113 obtains data on the oncoming carfrom the sensor 104 in a manner similar to that of Step S01. The data isoutput to the arithmetic circuit 113 as the signal S_(OC) as describedabove.

In Step S14, the arithmetic circuit 113 judges whether the oncoming carhas been sensed on the basis of the signal S_(OC) in a manner similar tothat of Step S02. Thus, whether the oncoming car sensed in Step S01 haspassed by the mobile unit 100 can be judged. In the case where theoncoming car has been sensed, go to Step S15.

In Step S15, the arithmetic circuit 113 obtains data on the state oflight that is being emitted by the oncoming car from the sensor 104 in amanner similar to that of Step S03. The data is output to the arithmeticcircuit 113 as the signal S_(HL) as described above. Thus, whether theoncoming car is emitting high beams can be judged.

In Step S16, the arithmetic circuit 113 judges whether the oncoming caris emitting high beams, on the basis of the signal S_(HL) in a mannersimilar to that of Step S04. Thus, whether the oncoming car has switchedfrom high beams to low beams or the like, for example, can be judged. Inthe case where the oncoming car is continuously emitting high beams,after the data on the relative velocity V_(RE) of the oncoming car seenfrom the mobile unit 100 is obtained in Step S17, a return to Step S10is made and data on the position of the eyes of the driver who is ridingin the mobile unit 100 and data on the region irradiated with high beamsare obtained again.

Note that Step S17 may be omitted. In this case, the relative velocityV_(RE) can be regarded as not having been changed, for example.Furthermore, the data on the position of the eyes of the driver is notnecessarily obtained. In this case, the position of the eyes of thedriver can be regarded as being similar to the position of the eyessensed in Step S10 carried out right after the finish of Step S09, forexample.

In the case where it is judged in Step S14 that an oncoming car has notbeen sensed or it is judged in Step S16 that the oncoming car is notemitting high beams, go to Step S18. In Step S18, the lighttransmittance of the window portion 102, which is decreased in Step S12,is returned to the original transmittance.

After Step S18 is finished, a return to Step S01 is made. Note that StepS18 may be omitted. In this case, in the case where it is judged in StepS14 that an oncoming car has not been sensed or it is judged in Step S16that the oncoming car is not emitting high beams, a return to Step S01is made. This is an operation example of the mobile unit and the systemfor the mobile unit of one embodiment of the present invention.

Note that the operation procedure shown in FIG. 3 is only an example,and any operation procedure can be employed as long as one embodiment ofthe present invention can be achieved.

The mobile unit and the system for the mobile unit of one embodiment ofthe present invention will be described by showing a specificapplication example. FIG. 4, FIG. 5, FIG. 7, and FIG. 8 illustrate themobile unit 100 running at a constant velocity V and an oncoming carrunning at a constant velocity V′. The headlight 131 of the oncoming car130 is emitting the high beam 132. Note that a position P_(FLAG)represents a location that is the irradiation distance D_(HB) of thehigh beam 132 away from the oncoming car 130. When the mobile unit 100reaches the position P_(FLAG), the eyes of the driver who is riding inthe mobile unit 100 are irradiated with the high beam 132. That is, thetime T_(FLAG) represents the time necessary for the mobile unit 100 toreach the position P_(FLAG).

FIG. 4 illustrates a case in which the eyes of the driver who is ridingin the mobile unit 100 are not being irradiated with the high beam 132,and in addition, the time T_(FLAG) is longer than the time T_(TR) spentin changing the light transmittance of the window portion 102. In thiscase, the driver does not perceive glare even if the window portion 102is in a state of having a high light transmittance.

After time has passed from the state of FIG. 4, a state of FIG. 5 ismade. FIG. 5 illustrates a case in which the mobile unit 100 becomescloser to the oncoming car 130 than the state of FIG. 4 and the timeT_(FLAG) is equal to the time T_(TR). In addition, the inside of themobile unit 100 in that case is illustrated in FIG. 6. Note that in FIG.6, the high beam 132 is not illustrated.

In the case where the state of FIG. 5 is made, the position of eyes 121of a driver 120 riding in the mobile unit 100 is sensed by the sensor103 illustrated in FIG. 6. Moreover, a region that is to be irradiatedwith the high beam 132 emitted by the headlight 131 of the oncoming car130 is sensed by the sensor 104 illustrated in FIG. 6. Then, a region140 of the window portion 102 in which light transmittance is to bechanged is calculated from the position of the eyes 121, the position ofthe high beam 132, and the like, which have been sensed, and thetransmittance of the region 140 is changed. Accordingly, the glareperceived by the driver 120 can be reduced, and in addition, a reductionin visibility can be suppressed more than the case of changing thetransmittance over the entire window portion 102.

After time has passed from the state of FIG. 5, a state of FIG. 7 ismade. FIG. 7 illustrates a case in which the mobile unit 100 has becomecloser to the oncoming car 130 than the state of FIG. 5 and passed theposition P_(FLAG) but the eyes 121 illustrated in FIG. 6 arecontinuously being irradiated with the high beam 132. In this case also,the position of the high beam 132 keeps being sensed and the position ofthe region 140 is changed in accordance with changes in the position ofthe high beam 132. In addition, the light transmittance of the windowportion 102 in the region 140 is decreased. In the case where the windowportion 102 in the region other than the region 140 has a decreasedlight transmittance, the light transmittance of the window portion 102in that region is returned to the original light transmittance.

Note that as described above, the region 140 can be, for example, aregion between the region irradiated with the high beam 132 and the eyes121 at any of the times from the time of obtaining the signal S_(HB) tothe time when the time T_(R) has passed from the obtainment of thesignal S_(HB). Furthermore, a region in the vicinity of theabove-described region can also be included in the region 140.

After time has passed from the state of FIG. 7, a state of FIG. 8 ismade. FIG. 7 illustrates a case in which the eyes 121 illustrated inFIG. 6 are not irradiated with the high beam 132 anymore. In the casewhere this state is made, the decreased transmittance in all the regionin the window portion 102 is returned to the original transmittance.

Note that in the states of from FIG. 5 to FIG. 7, in the case where theheadlight 131 of the oncoming car 130 has ceased emitting the high beam132, for example in the case where a switch from the high beam 132 tothe low beam 133 is conducted, the decreased transmittance is returnedto the original transmittance in all the region in the window portion102.

The application example illustrated in FIG. 4 to FIG. 8 is merely anexample, and the application is possible in an arbitrary situation aslong as one embodiment of the present invention can be achieved.

Next, a structure that can be applied to the window portion 102 will bedescribed. FIG. 9(A) illustrates a liquid crystal panel 200 that can beused in the window portion 102.

The liquid crystal panel 200 of FIG. 9(A) includes a substrate 201A, asubstrate 201B, and a liquid crystal 202. The substrate 201A and thesubstrate 201B include electrodes, so that an electric field applied toa liquid crystal can be controlled and the light transmittance can becontrolled.

Examples of a method for driving the liquid crystal include a TW(Twisted Nematic) mode, a STN (Super Twisted Nematic) mode, a VA mode,an ASM (Axially Symmetric Aligned Micro-cell) mode, an OCB (OpticallyCompensated Birefringence) mode, a FLC (Ferroelectric Liquid Crystal)mode, an AFLC (AntiFerroelectric Liquid Crystal) mode, an MVA mode, aPVA (Patterned Vertical Alignment) mode, an IPS mode, an FFS mode, a TBA(Transverse Bend Alignment) mode, and the like. Other than theabove-described driving methods, there are an ECB (ElectricallyControlled Birefringence) mode, a PDLC (Polymer Dispersed LiquidCrystal) mode, a PNLC (Polymer Network Liquid Crystal) mode, and aguest-host mode as the method for driving the liquid crystal.

The liquid crystal has a normally black mode where light transmittanceis low when the voltage is 0 and a normally white mode where lighttransmittance is high when the voltage is 0. In the case where anormally black mode liquid crystal panel is formed, a VA mode or IPSmode liquid crystal is used. In the case where a normally white modeliquid crystal panel is formed, a TN mode or OCB mode liquid crystal isused.

As the liquid crystal, a thermotropic liquid crystal, a low-molecularliquid crystal, a high-molecular liquid crystal, a polymer dispersedliquid crystal, a ferroelectric liquid crystal, an anti-ferroelectricliquid crystal, or the like can be used. Such a liquid crystal materialexhibits a cholesteric phase, a smectic phase, a cubic phase, a chiralnematic phase, an isotropic phase, or the like depending on conditions.

Alternatively, a liquid crystal exhibiting a blue phase for which analignment film is not used may be used. The blue phase is one of liquidcrystal phases, which is generated just before a cholesteric phasechanges into an isotropic phase when the temperature of a cholestericliquid crystal is increased. Since the blue phase appears only in anarrow temperature range, a liquid crystal composition in which 5 weightpercent or more of a chiral material is mixed is used for the liquidcrystal layer in order to improve the temperature range. The liquidcrystal composition that includes the liquid crystal exhibiting a bluephase and a chiral material has a short response time of 1 msec or lessand has optical isotropy, which makes the alignment process unnecessaryand the viewing angle dependence small. In addition, since an alignmentfilm does not need to be provided and rubbing treatment is unnecessary,electrostatic discharge caused by the rubbing treatment can beprevented.

The liquid crystal panel 200 of FIG. 9(B) includes a polarizing plate203A and a polarizing plate 203B in addition to the substrate 201A, thesubstrate 201B, and the liquid crystal 202.

The liquid crystal panel may have a structure including a liquid crystalin a plurality of layers. The liquid crystal panel 200 of FIG. 9(C)includes a substrate 201C, a liquid crystal 202A, and a liquid crystal202B in addition to the substrate 201A and the substrate 201B. With thisstructure, the individual layers including the liquid crystal can becontrolled separately, and a complex control of light transmittance canbe achieved.

FIG. 10(A) illustrates a view of the mobile unit 100 seen from theabove. FIG. 10(A) illustrates a windshield 211, a front door glass 212,a rear door glass 213, and a back glass 214 as the window portion of themobile unit 100. The liquid crystal panel 200 described with FIGS. 9(A),(B) can be used in at least the windshield 211. Furthermore, oneembodiment of the present invention may be used in a sun visor or thelike as well as in the window portion.

Like FIG. 10(A), FIG. 10(B) illustrates a view of the mobile unit 100seen from the above. As describe above, a normally white mode liquidcrystal or a normally black mode liquid crystal can be used as theliquid crystal of the liquid crystal panel 200. In FIG. 10(B), anexample in which a liquid crystal panel including a normally white modeliquid crystal is used as a windshield 211W and a front door glass 212Wand a liquid crystal panel including a normally black mode liquidcrystal is used as a rear door glass 213B and a back glass 214B isillustrated.

With the structure of FIG. 10(B), no transmission of light can beallowed in the window portion near the rear seats in the state without avoltage application; accordingly, privacy of the occupant can beassured. Furthermore, with the structure of FIG. 10(B), transmission oflight can be allowed in the window portion near the front seats; thus,transmission of light can be ensured even in the situation whereelectrical control is difficult.

FIG. 11 illustrates a schematic view in which the liquid crystal panel200 described with reference to FIGS. 9(A), (B) is used in thewindshield 211 in the panel shape. As illustrated in FIG. 11, thewindshield 211 is filled with the liquid crystal panels 200. With thisstructure, the individual liquid crystal panels can be controlled tohave different light transmittances. With this structure, the lighttransmittance of only the liquid crystal panel between the regionirradiated with high beams emitted by the oncoming car and the eyes ofthe driver who is riding in the mobile unit 100 can be controlled, forexample. Moreover, the light transmittance of only the liquid crystalpanel between the region irradiated with high beams emitted by theoncoming car and the eyes of the driver who is riding in the mobile unit100 and the liquid crystal panel provided in the vicinity of the liquidcrystal panel can be controlled, for example. Note that a material thatdoes not transmit infrared rays and/or ultraviolet rays or the like maybe used as the windshield 211 in the structure illustrated in FIG. 11.

Next, the sensors included in the mobile unit 100 will be described. Thesensor 103 and the sensor 104 may have the same performance ordifference performances. For example, as the sensor 104, a sensor with ahigh light-dark dynamic range is preferably used so that the oncomingcar and whether light emitted by the oncoming car is high beam iscorrectly sensed. Furthermore, for example, as the sensor 104, a sensorwith a high frame frequency is preferably used so that the regionirradiated with high beams emitted by the oncoming car can be correctlysensed even when the oncoming car is moving at high speed. Moreover, asensor having a lower performance than the sensor 104 may be used as thesensor 103. In other words, the sensor 103 may have a lower light-darkdynamic range than the sensor 104 and a lower frame frequency than thesensor 104. By using a sensor with lower performance than the sensor 104as the sensor 103, a mobile unit of one embodiment of the presentinvention can be manufactured at low cost.

Note that in the case where the mobile unit 100 includes the sensor 105in addition to the sensor 103 and the sensor 104 as illustrated in FIG.1(B), the sensor 104 and the sensor 105 preferably have higherperformance than the sensor 103. In other words, the sensor 104 and thesensor 105 preferably have a higher light-dark dynamic range than thesensor 103 and in addition a higher frame frequency than the sensor 103.

FIG. 12 is a block diagram illustrating a circuit configuration of animaging device, such as a sensor, included in a mobile unit of oneembodiment of the present invention. The imaging device includes a pixelarray 21 including the pixels 20 arranged in a matrix, a circuit 22 (rowdriver) having a function of selecting a row of the pixel array 21, acircuit 23 (CDS circuit) for performing a CDS operation on an outputsignal of the pixel 20, a circuit 24 (A/D converter circuit or the like)having a function of converting analog data output from the circuit 23to digital data, and a circuit 25 (column driver) having a function ofselecting and reading data converted in the circuit 24. Note that aconfiguration not provided with the circuit 23 can also be employed.Furthermore, the circuits 22 to 25 are collectively referred to as acircuit 30.

An imaging element 11 can operate by a global shutter method and arolling shutter method. FIG. 13(A) is a schematic view of an operationmethod with a global shutter method, and FIG. 13(B) is a schematic viewof an operation method with a rolling shutter method. In FIGS. 13(A),(B), “E” represents a period in which a light exposure operation can beperformed, and “R” represents a period in which a reading operation canbe performed. Moreover, n represents a given n-th frame (n is a naturalnumber of 2 or more); n−1 represents a frame previous to the n-th frame;and n+1 represents a frame following the n-th frame. Pixels are assumedto be arranged in a matrix as illustrated in FIG. 12. Furthermore,Row[1] represents a pixel in a first row, and Row[M] represents a pixelin an M-th row (last row).

FIG. 13(A) is a schematic view of the operation method with the globalshutter method. The global shutter method is an operation method inwhich light exposure is simultaneously performed on all pixels and thendata reading is performed row by row. Thus, an image without distortioncan be obtained even when a moving object is captured. That is, thesensor 104 and the sensor 105 preferably include the imaging element 11which operates by the global shutter method.

FIG. 13(B) is a schematic view of the operation method with the rollingshutter method. The rolling shutter method is an operation method inwhich light exposure and data reading are sequentially performed row byrow. Since imaging cannot be simultaneously performed on all pixels,distortion is caused in a captured image of a moving object. Althoughthe details are described later, however, in the case where sometransistors are shared by a plurality of pixels, the pixel 20 includedin the imaging element 11 which operates by the rolling shutter methodcan reduce the number of transistors included in one pixel 20 more thanthe pixel 20 included in the imaging element 11 which operates by theglobal shutter method. Accordingly, the imaging element 11 can bereduced in size. Thus, it is preferable that the sensor 103 include theimaging element 11 which operates by the rolling shutter method becausethe sensor 103 can be reduced in size.

FIG. 14 is a circuit diagram of the pixel 20. Note that an example inwhich transistors are n-channel transistors is shown in the descriptionbelow; however, without limitation to this, some transistors may bereplaced with p-channel transistors.

The pixel 20 includes a photoelectric conversion element PD andtransistors 41 to 44. In addition, one electrode of the photoelectricconversion element PD is electrically connected to one of a source and adrain of the transistor 41. The other of the source and the drain of thetransistor 41 is electrically connected to one of a source and a drainof a transistor 42. The other of the source and the drain of thetransistor 41 is electrically connected to a gate of a transistor 43.One of a source and a drain of the transistor 43 is electricallyconnected to one of a source and a drain of a transistor 44.

Here, a node FD to which the other of the source and the drain of thetransistor 41, the one of the source and the drain of the transistor 42,and the gate of the transistor 43 are connected is a charge accumulationportion.

The other electrode of the photoelectric conversion element PD iselectrically connected to a wiring 71 (VPD). The other of the source andthe drain of the transistor 42 is electrically connected to a wiring 72(VRS). The other of the source and the drain of the transistor 43 iselectrically connected to a wiring 73 (VPI). The other of the source andthe drain of the transistor 44 is electrically connected to a wiring 91(OUT1).

Note that the way of connection between a component such as a transistoror a photoelectric conversion element and a wiring is an example.Components might be electrically connected to different wirings, or aplurality of components might be electrically connected to the samewiring.

The wiring 71 (VPD), the wiring 72 (VRS), and the wiring 73 (VPI)function as power supply lines. For example, the wiring 71 (VPD) canfunction as a low-potential power supply line. The wiring 72 (VRS) andthe wiring 73 (VPI) can function as high-potential power supply lines.

A gate of the transistor 41 is electrically connected to a wiring 61(TX). A gate of the transistor 42 is electrically connected to a wiring62 (RS). A gate of the transistor 44 is electrically connected to awiring 63 (SE).

The wiring 61 (TX), the wiring 62 (RS), and the wiring 63 (SE) can eachfunction as a signal line for controlling the conduction of thetransistor to which the wiring is connected.

The transistor 41 can function as a transistor for transferring thepotential of the cathode of the photoelectric conversion element PD tothe node FD. The transistor 42 can function as a transistor forresetting the potential of the node FD. The transistor 43 can functionas a transistor for performing the output in accordance with thepotential of the node FD. The transistor 44 can function as a transistorfor selecting the pixel 20.

Note that the above structure of the pixel 20 is just an example, andsome of the circuits, the transistors, the capacitor, the wirings, orthe like are not included in some cases. Alternatively, a circuit, atransistor, a capacitor, a wiring, or the like that is not included inthe above structure may be included; or the way of connecting somewirings may be different from that described above.

Transistors that use an oxide semiconductor in their channel formationregions (hereinafter, OS transistors) can be used as the transistor 41and the transistor 42. An OS transistor has a lower off-state currentthan a transistor that uses silicon in its channel formation region(hereinafter, a Si transistor). That is, when OS transistors are used asthe transistor 41 and the transistor 42, charge accumulated in the nodeFD can be retained for a long period. Thus, a global shutter method inwhich a charge accumulation operation is performed in all the pixels atthe same time can be used without a complicated circuit configuration ora complicated operation method. For this reason, OS transistors arepreferably used as the transistor 41 and the transistor 42 included inthe sensor 104 and the sensor 105. Note that OS transistors may be usedas the transistor 43 and the transistor 44.

The OS transistor has lower temperature dependence of change inelectrical characteristics than the Si transistor, and thus can be usedin an extremely wide range of temperatures. Therefore, OS transistorsare preferably used for a semiconductor device such as a sensor mountedin automobiles and the like.

Note that the pixel 20 may have a configuration in which a capacitor isconnected to the node FD as illustrated in FIG. 15(A). Furthermore, asillustrated in FIG. 15(B), the direction of the photoelectric conversionelement PD in the pixel 20 may be opposite to that in FIG. 14.

The transistors used in the pixel 20 may have a circuit configuration asillustrated in FIG. 16(A) in which backgates are provided in thetransistor 41 to the transistor 44. FIG. 16(A) illustrates a structurewhere a constant potential is applied to the backgates, which enablescontrol of the threshold voltages.

A wiring 75 to a wiring 78 connected to the respective backgates can besupplied with a different potential separately. Alternatively, asillustrated in FIG. 16(B), the wirings connected to the backgates of thetransistor 41 and the transistor 42 may be electrically connected toeach other, and the wirings connected to the backgates of the transistor43 and the transistor 44 may be electrically connected to each other.

In an n-channel transistor, the threshold voltage is shifted in thepositive direction when a potential lower than a source potential isapplied to the backgate. In contrast, the threshold voltage is shiftedin the negative direction when a potential higher than a sourcepotential is applied to the backgate. Accordingly, in the case where theon/off of each transistor is controlled with a predetermined gatevoltage, the off-state current can be reduced when a potential lowerthan a source potential is supplied to a backgate, and the on-statecurrent can be increased when a potential higher than a source potentialis supplied to the backgate.

As described above, transistors with a high on-state current arepreferably used as the transistor 43 and the transistor 44. The on-statecurrent can be increased when a potential higher than a source potentialis applied to the backgates of the transistor 43 and the transistor 44.Therefore, a reading potential output to the wiring 91 (OUT1) can bedetermined immediately, that is, an operation at high frequency ispossible.

Note that as illustrated in FIG. 16(C), the same potential as thatapplied to a front gate may be applied to the backgate of the transistor44.

Besides power supply potentials, a plurality of potentials such as asignal potential and a potential applied to the backgate are used insidean imaging device. Supply of a plurality of potentials from the outsideof an imaging device increases the number of terminals and the like;thus, an imaging device preferably has a power supply circuit thatgenerates a plurality of potentials inside the imaging device.

The operation of the pixel circuit in FIG. 16(A) is described using atiming chart illustrated in FIG. 17. In the timing chart, V1 can be apotential higher than a reference potential and can be, for example, ahigh power supply potential (VDD). V0 can be a reference potential, thatis, a source potential and can be, for example, 0 V, a GND potential,and a low power supply potential (VSS).

First, at Time T1, the transistor 41 and the transistor 42 are broughtinto conduction and the node FD is reset to a reset potential (e.g.,VDD) when the potentials of the wiring 75 (RS) and the wiring 61 (TX)are set to V1 (a reset operation). At this time, the on-state currentsof the transistor 41 and the transistor 42 are increased when thepotentials of the wiring 75 and the wiring 76 are set to potentialshigher than V0 (>V0), so that the reset operation can be performedimmediately.

At Time T2 when the potential of the wiring 75 (RS) is set to V0, thetransistor 42 is brought into non-conduction and the reset operation isterminated to start an accumulation operation. At this time, by settingthe potential of the wiring 76 to a potential lower than V0, theoff-state current of the transistor 42 can be reduced and the supply ofcharge to the node FD by a leakage current can be prevented. At Time T2,the potential of the wiring 75 may be set to V0.

At Time T3 when the potential of the wiring 61 (TX) is set to V0, thetransistor 41 is brought into non-conduction and the potential of thenode FD is defined and held (a holding operation). At this time, bysetting the potential of the wiring 75 to a potential lower than V0(<V0), the off-state current of the transistor 41 can be reduced andleakage of charge from the node FD by a leakage current can beprevented.

At Time T4 when the potential of the wiring 63 (SE) is set to V1, thetransistor 44 is brought into conduction and the potential of the wiring91 (OUT1) changes in accordance with a current flowing through thetransistor 43 (a reading operation). At this time, by setting thepotentials of the wiring 77 and the wiring 78 to potentials higher thanV0 (>V0), the on-state currents of the transistor 43 and the transistor44 are increased and the potential of the wiring 91 (OUT1) can bedefined immediately.

At Time T5 when the potential of the wiring 63 (SE) is set to V0, thetransistor 44 is brought into non-conduction, so that the readingoperation is completed. Note that the potentials of the wiring 75 andthe wiring 76 are preferably held lower than V0 (<V0) so that thepotential of the node FD does not change until the reading operation iscompleted. The potentials of the wiring 75 and the wiring 76 may bechanged with the same timing in the above description.

In the above manner, a signal determined in accordance with thepotential of the node FD can be read. Note that the pixel 20 in FIG. 14may be operated without controlling the wirings 75 to 78 in the timingchart illustrated in FIG. 17. The pixel 20 in FIG. 16(B) may be operatedwithout controlling the wiring 76 and the wiring 78 in the timing chartillustrated in FIG. 17.

In a pixel circuit of one embodiment of the present invention,transistors may be shared among a plurality of pixels as illustrated inFIGS. 18(A), (B).

A pixel 20 a to a pixel 20 d illustrated in FIG. 18(A) in whichtransistors are shared have a structure in which the pixels eachindividually include the photoelectric conversion element PD, thetransistor 41, and the transistor 45 and share the transistor 42 to thetransistor 44. The operations of the transistors 41 included in thepixel 20 a to the pixel 20 d are controlled by corresponding wirings 61a to 61 d. A potential can be held in the cathode of the photoelectricconversion element PD by providing the transistor 45, whose operation iscontrolled by the potential of a wiring 65 (GPD), between thephotoelectric conversion element PD and the wiring 71 (VPD). Thus, thisstructure is suitable for imaging using a global shutter method, inwhich a reset operation, an accumulation operation, and a holdingoperation are performed in all the pixels at the same time and a readingoperation is performed pixel by pixel. For this reason, the pixel 20 ofthe imaging element 11 included in the sensor 104 and the sensor 105preferably has the circuit configuration illustrated in FIG. 18(A).

The pixel 20 a to the pixel 20 d illustrated in FIG. 18(B) in whichtransistors are shared have a structure in which the pixels eachindividually include the photoelectric conversion element PD and thetransistor 41 and share the transistor 42 to the transistor 44. Thisstructure allows a reset operation, an accumulation operation, a holdingoperation, and a reading operation to be sequentially performed pixel bypixel and is chiefly suitable for imaging using a rolling shuttermethod. Since the transistor 45 is not included, the number oftransistors per pixel can be reduced. From the above, the pixel 20 ofthe imaging element 11 included in the sensor 103 preferably has thecircuit configuration illustrated in FIG. 18(B).

In the pixel circuits illustrated in FIGS. 18(A), (B), the plurality ofpixels (the pixel 20 a, the pixel 20 b, the pixel 20 c, the pixel 20 d)aligned in the direction in which the wiring 91 (OUT1) extends(hereinafter, referred to as a vertical direction) share thetransistors; however, a plurality of pixels aligned in the direction inwhich the wiring 64 (SE) extends (hereinafter, referred to as ahorizontal direction) may share transistors. Alternatively, a pluralityof pixels aligned in the horizontal and vertical directions may sharetransistors.

Furthermore, the number of pixels that share transistors is not limitedto four, and may be two, three, or five or more.

Although the wiring 72 (VRS) and the wiring 73 (VPI) illustrated in FIG.14 are merged into one wiring and the wiring 72 (VRS) is omitted in thestructures in FIGS. 18(A), (B), the wiring 72 (VRS) may be included.

Although a case in which one sensor 103 is provided over a dashboard isillustrated in FIG. 6, one embodiment of the present invention is notlimited to this. As illustrated in FIG. 19(A), two sensors 103L and 103Rmay be provided as the sensor 103, for example. In this case, forexample, the position of the left eye 121L of the driver 120 can besensed by the sensor 103L, and the position of the right eye 121R can besensed by the sensor 103R. Accordingly, the position of the eyes 121 ofthe driver 120 can be sensed more precisely.

The sensor 103 can be provided in an arbitrary position other than “overthe dashboard”, and the sensor 103 may be provided on the window portion102, for example. Furthermore, in the case where two sensors 103L and103R are provided as the sensor 103, the sensor 103L and the sensor 103Rcan be provided in front of the face of the driver 120, for example. Thesensor 103L and the sensor 103R can be provided over a dashboard, forexample. The sensor 103L can be provided over a dashboard, and thesensor 103R can be provided on a pillar or a side door, for example.

Note that because the sensor 103 has a function of sensing the positionof the eyes 121 of the driver 120 who is riding in the mobile unit 100for example, the sensor 103 is preferably provided inside the mobileunit 100. However, the sensor 103 may be provided outside the mobileunit 100 as well.

One of the sensor 103L and the sensor 103R may be an infrared sensor,and the other of the sensor 103L and the sensor 103R may be a sensorthat senses visible light. In this case, the position of the driver 120can be sensed by the infrared sensor, and the eyes 121 of the driver 120can be sensed by the sensor that senses visible light. Furthermore,three or more sensors 103 may be provided; in which case, one or more ofthe sensors 103 may be infrared sensors and the rest of the sensors 103may be sensors that sense visible light.

Furthermore, as illustrated in FIG. 19(B), a sensor 151 having afunction of sensing the position of a seat 150 provided in a driver'sseat, the angle of a backrest, and the like may be provided in themobile unit 100. This can allow more precise sensing of the position ofthe eyes 121 of the driver 120. Note that although a structure in whichthe sensor 151 is provided on the ceiling of the mobile unit 100 isemployed in FIG. 19(B), the sensor 151 can be provided in an arbitraryposition. For example, the sensor 151 may be provided over a dashboardof the mobile unit 100. For example, the sensor 151 may be provided onthe window portion 102 of the mobile unit 100. Furthermore, without theprovision of the sensor 151, the position of the seat 150, the angle ofthe backrest, and the like may be sensed by the sensor 103.

Note that although the light transmittance of the window portion 102 iscontrolled in one embodiment of the present invention, a structure inwhich a sun visor 152 is placed in the vicinity of the face of thedriver 120 as illustrated in FIG. 20 may be employed. In this case, thelight transmittance of the sun visor 152 is locally controlled. Inaddition, the sensor 103 can be provided on the sun visor 152.

Although a case in which one sensor 104 is provided on the windowportion 102 is illustrated in FIG. 6, one embodiment of the presentinvention is not limited to this. As the sensor 104, two sensors 104Land 104R may be provided, for example, which is preferable because thedistance between the mobile unit 100 and an oncoming car can beprecisely measured, for example.

The sensor 104L and the sensor 104R can be provided on a front bumper asillustrated in FIG. 21(A), for example. Furthermore, they can beprovided on side mirrors as illustrated in FIG. 21(B), for example.Moreover, they can be provided on a roof as illustrated in FIG. 21(C),for example.

Because the sensor 104 has a function of sensing an oncoming car forexample, it is preferably provided outside the mobile unit 100. However,the sensor 104 may be provided inside the mobile unit 100 as well. Inthe case of providing the sensor 104 inside the mobile unit 100, thesensor 104 can be provided on the window portion 102 as illustrated inFIG. 6, for example. Note that in the case where the sensor 104 isprovided on the window portion 102, a structure in which the lighttransmittance of the window portion 102 in a region in front of thesensor 104 and in the vicinity thereof does not change is preferable.Thus, a decrease in the accuracy of sensing an oncoming car or the likeof the sensor 104 can be suppressed.

Note that in the case where the mobile unit 100 includes the sensor 105as illustrated in FIG. 1(B), FIG. 6 and FIG. 21 can be referred to asappropriate for the position where the sensor 105 is provided. In otherwords, the sensor 105 can be provided in a position similar to that ofthe sensor 104. For example, the sensor 104 can be provided on a frontbumper, and the sensor 105 can be provided on the window portion 102.Furthermore, for example, the sensor 104 can be provided on a roof, andthe sensor 105 can be provided on a front bumper.

In the mobile unit and the system for a mobile unit of one embodiment ofthe present invention, the light transmittance of the front door glass212, the rear door glass 213, the back glass 214, and the like may becontrolled. For example, a liquid crystal panel is attached to the frontdoor glass 212, the rear door glass 213, the back glass 214, and thelike, so that the light transmittance can be controlled.

For example, in the case where a headlight 161 of a car 160 behind themobile unit 100 is emitting a high beam 162 as illustrated in FIG.22(A), the eyes of the driver who is riding in the mobile unit 100 areirradiated with the high beam 162, and the driver may perceive glare.Thus, in the case where the headlight 161 is emitting the high beam 162,the light transmittance of the front door glass 212, the rear door glass213, the back glass 214, and the like is decreased; in this way, theglare perceived by the driver riding in the mobile unit 100 can bereduced.

The light transmittance of all the region of the front door glass 212,the rear door glass 213, the back glass 214, and the like may becontrolled at the same time, or the light transmittance may be locallycontrolled. For example, the light transmittance of only a regionbetween the high beam 162 and the eyes of the driver who is riding inthe mobile unit 100 of the front door glass 212, the rear door glass213, the back glass 214, and the like may be decreased. For example, thelight transmittance of only a region between the high beam 162 and theeyes of the driver who is riding in the mobile unit 100 and a region inthe vicinity thereof of the front door glass 212, the rear door glass213, the back glass 214, and the like may be decreased. In the case oflocally controlling the light transmittance like this, the glareperceived by the driver who is riding in the mobile unit 100 can bereduced, and in addition, a reduction in visibility can be suppressed.

Furthermore, in the mobile unit and the system for a mobile unit of oneembodiment of the present invention, the reflectance of a rearviewmirror of the mobile unit 100 may be controlled. For example, in thecase where the headlight 161 is emitting the high beam 162, thereflectance of the rearview mirror is decreased, so that the glareperceived by the driver who is riding in the mobile unit 100 can bereduced.

Note that the sensor 104, the sensor 105, or another sensor may be usedas a sensor that senses the high beam 162. In the case of using anothersensor, a sensor 164 having a function of sensing the high beam 162 canbe provided on a rear bumper as illustrated in FIG. 22(B), for example.Alternatively, for example, it can be provided on the roof, the sidemirror, or the like.

Note that although a case in which one sensor 164 is provided isillustrated in FIG. 22(B), one embodiment of the present invention isnot limited to this. As illustrated in FIG. 22(C), two sensors 164L and164R may be provided as the sensor 164, for example.

Furthermore, the mobile unit 100 may be provided with a sensor having afunction of sensing the car 160 behind. The car 160 behind may be sensedby the sensor 104, the sensor 105, the sensor 164, or a dedicatedsensor.

In the mobile unit and the system for a mobile unit of one embodiment ofthe present invention, when the face of the driver 120 is facing aside,the position of the eyes 121 which would exist when the face of thedriver 120 faces to the front may be predicted. For example, a pillar ora side door on the driver's seat side and a pillar or a side door on thepassenger seat side are provided with a sensor 123R and a sensor 123L,respectively, as illustrated in FIG. 23, and whether the face of thedriver 120 is facing aside is sensed by the sensor 123R or the sensor123L. In the case where the face of the driver 120 is facing aside, thearithmetic circuit 113 illustrated in FIGS. 1(A), (B) obtains data on aregion 122 where the eyes 121 would exist when the face of the driver120 faces to the front according to the prediction, instead of data onthe position of the eyes 121, for example. Then, from the region 122,the region 140 of the window portion 102 to change the lighttransmittance is calculated, for example.

The data on the region 122 can be stored in the memory circuit 112illustrated in FIGS. 1(A), (B), for example. In this case, the memorycircuit 112 has a function of outputting a signal having data on theregion 122 to the arithmetic circuit 113. Note that the region 122 canbe calculated from, for example, the position of the eyes 121 sensed bythe sensor 103 when the face of the driver 120 faces to the front.

Although a case in which whether the face of the driver 120 is facingaside is sensed by the sensor 123R and the sensor 123L is illustrated inFIG. 23, one embodiment of the present invention is not limited to this.For example, whether the face of the driver 120 is facing aside may besensed by one sensor 123, for example. In this case, the sensor 123 canbe provided over a dashboard or on the window portion 102 or the like,for example. Moreover, whether the face of the driver 120 is facingaside may be sensed by the sensor 103.

The sensor 103 may have a function of sensing whether the driver 120 isdozing. For example, when an eye-closed rate of the driver 120 iscalculated and the eye-closed rate is lower than or equal to apreviously designated prescribed value, it is judged that the driver 120is dozing. Note that the prescribed value of the eye-closed rate can bestored in the memory circuit 112 illustrated in FIGS. 1(A), (B), forexample.

FIG. 24(A) illustrates a state of the eye 121 in the awakened state.FIG. 24(B) illustrates a state of the eye 121 in the doze state. Forexample, when the length from the lower eyelid to the upper eyelid ofthe eye 121 in the awakened state is L_(OP) and the length from thelower eyelid to the upper eyelid of the eye 121 in the doze state isL_(CL), the eye-closed rate can be calculated from L_(CL)/L_(OP), forexample.

Note that the eye-closed rate of the driver 120 can be calculated by thesensor circuit 111 illustrated in FIGS. 1(A), (B), for example.Furthermore, whether the driver 120 is dozing can be judged by thearithmetic circuit 113 illustrated in FIGS. 1(A), (B), for example. Thearithmetic circuit 113 has a function of outputting a signal S_(DOZ)including data on whether the driver 120 is dozing, for example.

Note that the length L_(OP) from the lower eyelid to the upper eyelid ofthe eye 121 in the awakened state differs depending on the person. Thus,it is preferable to measure the length L_(OP) of the driver in advanceand store it in the memory circuit 112 or the like. Furthermore, theprescribed value of the eye-closed rate of the driver 120 used forjudging whether the driver 120 is dozing may vary with drivers.

Furthermore, in the case where the driver 120 blinks, the eye-closedrate of the driver 120 is decreased. Accordingly, in the case where theeye-closed rate of the driver 120 becomes lower than or equal to theprescribed value but the eye-closed rate of the driver 120 exceeds theprescribed value within a certain time, it is preferable to judge thatthe driver 120 is not dozing. The certain time is 0.15 s, for example.Thus, whether the driver 120 is dozing can be correctly judged.

In one embodiment of the present invention, a light having a function ofirradiating the eyes 121 with light is provided in the mobile unit 100,and the light can be made to emit light in the case where it is judgedthat the driver 120 is dozing, for example. Moreover, an alarm may beprovided in the mobile unit 100, for example, so that the alarm canoperate when it is judged that the driver 120 is dozing. Thus, a doze ofthe driver 120 can be suppressed. Note that the arithmetic circuit 113can output the signal S_(DOZ) to the above-described light or alarm, andthe light or alarm has a function of operating in accordance with thesignal S_(DOZ).

The sensor 103 and the sensor 104 may have a function of sensing anobstacle. For example, as illustrated in FIG. 25(A), they may have afunction of sensing an obstacle such as a pedestrian 135 who is crossingahead of the mobile unit 100. In the case where it is predicted that themobile unit 100 will collide with an obstacle if the mobile unit 100does not reduce the speed, the speed of the mobile unit 100 isautomatically reduced to the speed that does not cause a collision.Thus, a collision of the mobile unit 100 with an obstacle can besuppressed, for example.

FIG. 25(B) is a block diagram illustrating a structure example of themobile unit and the system for a mobile unit of one embodiment of thepresent invention in the case where the sensor 103 and the sensor 104have a function of sensing an obstacle.

The sensor 103 and the sensor 104 have a function of sensing an obstacleand outputting a signal S_(OB) including data on the obstacle to anarithmetic circuit. Note that the signal S_(OB) includes data on whetheran obstacle is existing ahead of the mobile unit 100, data on thedistance between the mobile unit 100 and the obstacle, and the like, forexample.

The sensor circuit 111 has a function of outputting a signal S_(DOB)including data on the moving direction D_(OB) of an obstacle to thearithmetic circuit 113. Furthermore, the sensor circuit 111 has afunction of outputting a signal S_(VOB) including data on the movingvelocity V_(OB) of an obstacle to the arithmetic circuit 113. Moreover,the sensor circuit 111 has a function of outputting a signal S_(VMOV)including data on the velocity V_(MOV) of the mobile unit 100 to thearithmetic circuit 113.

The arithmetic circuit 113 has a function of outputting a signal S_(BR)for operating a brake 114. The signal S_(BR) includes data on thedeceleration of the mobile unit 100 necessary for preventing the contactbetween the mobile unit 100 and an obstacle.

Note that although the description of the memory circuit 112 is omittedin FIG. 25(B), the mobile unit 100 actually includes the memory circuit112 having the functions described using FIG. 1(A). Furthermore,although the signals illustrated in FIG. 1(A) are omitted in FIG. 25(B),the sensors and circuits illustrated in FIG. 25(B) have functions ofperforming input and output of signals illustrated in FIG. 1(A).

Next, an operation example of the mobile unit 100 having the structureillustrated in FIG. 25(B) will be described with reference to aflowchart illustrated in FIG. 26.

In Step S21, the arithmetic circuit 113 obtains data on an obstacle fromthe sensor 103 and the sensor 104. The data is output to the arithmeticcircuit 113 as the signal S_(OB) as described above. Note that asdescribed above, the signal S_(OB) includes data on whether an obstacleis existing ahead of the mobile unit 100, data on the distance betweenthe mobile unit 100 and the obstacle, and the like, for example.

In Step S22, the arithmetic circuit 113 judges whether an obstacle hasbeen sensed on the basis of the signal S_(OB). In the case where anobstacle has not been sensed, a return to Step S21 is made, and thearithmetic circuit 113 obtains data on an obstacle from the sensor 103and the sensor 104 again. In the case where an obstacle has not beensensed, go to Step S23.

In Step S23, the arithmetic circuit 113 obtains data on the movingdirection D_(OB) of the obstacle and data on the moving velocity V_(OB)of the obstacle from the sensor circuit 111. As described above, thedata on the moving direction D_(OB) is output to the arithmetic circuit113 as the signal S_(DOB), and the data on the moving velocity V_(OB) isoutput to the arithmetic circuit 113 as the signal S_(VOB).

In Step S24, the arithmetic circuit 113 judges whether the mobile unit100 will collide with the obstacle if the mobile unit 100 does notreduce the speed, from the data on the moving direction D_(OB) of theobstacle, the data on the moving velocity V_(OB) of the obstacle, thedata on the distance between the mobile unit 100 and the obstacleincluded in the signal S_(OB), and the like. In the case where themobile unit 100 will not collide with the obstacle even if the mobileunit 100 does not reduce the speed, a return to Step S21 is made. In thecase where the mobile unit 100 will collide with the obstacle if themobile unit 100 does not reduce the speed, go to Step S25.

In Step S25, the arithmetic circuit 113 obtains data on the velocityV_(MOV) of the mobile unit 100 from the sensor circuit 111. As describedabove, the data on the velocity V_(MOV) is output to the arithmeticcircuit 113 as the signal S_(VMOV).

In Step S26, the arithmetic circuit 113 calculates the deceleration ofthe mobile unit 100 necessary for preventing the collision of the mobileunit 100 with the obstacle, from the data on the velocity V_(MOV) of themobile unit 100, the data on the distance between the mobile unit 100and the obstacle included in the signal S_(OB), and the like. The dataon the deceleration is output to the brake 114 as the signal S_(BR) asdescribed above. The brake 114 automatically reduces the speed of themobile unit 100 on the basis of the signal S_(BR).

After Step S26 is finished, a return to Step S21 is made. The operationexample of the mobile unit 100 having the structure illustrated in FIG.25(B) is described so far.

Note that the deceleration of the mobile unit 100 is preferably set aslow as possible within a range where the mobile unit 100 is not incontact with an obstacle. Thus, a possibility of collision of a carbehind with the mobile unit 100 can be reduced. In addition, a shockapplied to an occupant of the mobile unit 100 can be reduced.

Furthermore, the deceleration of the mobile unit 100 may be controlledso that the mobile unit 100 and the obstacle can keep a distance of morethan or equal to a prescribed value, which is determined in advance,away from each other. The prescribed value can be stored in the memorycircuit 112, for example. In this case, for example in Step S24, it canbe judged whether the distance between the mobile unit 100 and theobstacle will be below the prescribed value if the mobile unit 100 doesnot reduce the speed. In the case where it is judged in Step S24 thatthe mobile unit 100 will not collide with the obstacle but the distancebetween the mobile unit 100 and the obstacle will be below theprescribed value if the mobile unit 100 does not reduce the speed, thestep does not return to S21 and can proceed to Step S25. Accordingly, inthe case where the moving direction D_(OB) of the obstacle and themoving velocity V_(OB) of the obstacle suddenly change, for example, apossibility of the collision of the mobile unit 100 with the obstaclecan be reduced.

The operation procedure illustrated in FIG. 26 is only an example, andany operation procedure can be employed as long as one embodiment of thepresent invention can be achieved.

Next, a cross-sectional structure of the pixels 20 included in theimaging element 11 will be described. FIG. 27(A) illustrates a structureof three pixels 20 (a pixel 20 e, a pixel 20 f, a pixel 20 g).

As illustrated in FIG. 27, the pixel 20 can include a layer 1100, alayer 1200, and a layer 1300. For example, the layer 1100 includes thetransistor 41 to the transistor 44 and the like in a pixel circuit. Thelayer 1200 includes the photoelectric conversion element PD and thelike. The layer 1300 includes a color filter, a microlens array, and thelike. As illustrated in FIG. 27, by employing a structure of integratingthe photoelectric conversion elements and the transistorsthree-dimensionally and performing a manufacturing process usingmaterials suitable for each component, an image sensor with higherperformance can be manufactured.

Note that in a cross-sectional view, an insulating layer 81 a to aninsulating layer 81 e, which each function as a protective film, aninterlayer insulating film, or a planarization film, and the like areprovided in each layer. For example, as the insulating layer 81 a to theinsulating layer 81 e, inorganic insulating films formed by a CVD(Chemical Vapor Deposition) method or the like, such as silicon oxidefilms or silicon oxynitride films, can be used. Alternatively, anorganic insulating film of an acrylic resin, polyimide, or the like maybe used. Top surfaces of the insulating layer 81 a to the insulatinglayer 81 e and the like are preferably subjected to planarizationtreatment as necessary by a CMP (Chemical Mechanical Polishing) methodor the like.

FIG. 27 illustrates an example of using top-gate OS transistors, aswhich the transistors 41 are shown as an example. The OS transistors areprovided over the insulating layer (the insulating layer 81 d) formedover the layer 1200 and include an oxide semiconductor layer 330, aconductive layer 340 which functions as a source electrode or a drainelectrode, an insulating layer 360 which functions as a gate insulatinglayer, and a conductive layer 370 which functions as a gate electrode.Note that the insulating layer 81 c can also have a function of a gateinsulating layer on the backgate side.

FIG. 27 shows, as an example, a structure in which the transistor 41 isprovided with a conductive layer 373 functioning as a backgateelectrode. The layer 1100 might be irradiated with light transmittedthrough the layer 1200 side. Thus, in the case where the OS transistorprovided in the pixel circuit is a top-gate transistor, a structure forblocking light with the provided backgate electrode is preferable. Notethat if the layer 1200 is thick enough and the light transmittance is inan allowable range, a structure not provided with the backgate electrodemay be employed. In the case where a light-blocking layer or the like isprovided additionally, a structure not provided with the backgateelectrode can be employed as well.

A photodiode provided in a single crystal silicon substrate can be usedas the photoelectric conversion element PD provided in the layer 1200.The photodiode has excellent photoelectric conversion characteristics.Moreover, it can be fabricated relatively easily because the singlecrystal silicon substrate, which is a base material, functions as aphotoelectric conversion layer. If necessary, the single crystal siliconsubstrate may be polished to have a thickness of 3 to 30 μm, forexample.

Note that FIG. 27 illustrates a p-n junction photodiode as an example,and as illustrated in the circuit diagram of FIG. 14, a region 510 canfunction as a cathode (an n-type region) and a region 520 can functionas an anode (a p-type region). For example, a p-type single crystalsilicon substrate is used, and the region 510 is made to be an n-type byaddition of a dopant such as phosphorus to the region 510. Note that inthe case where the direction of the photoelectric conversion element PDis opposite to that of FIG. 14 in the pixel 20 as illustrated in FIG.15(B), the region 510 can be an anode (p-type region) and the region 520can be a cathode (n-type region). For example, an n-type single crystalsilicon substrate is used, and the region 510 is made to be p-type byaddition of a dopant such as boron to the region 510.

In the photodiode provided in the layer 1200, as illustrated in FIG.28(A), a region 530 having a conductivity opposite to that of the region510 may be provided in part of a portion between the region 510 and theinsulating layer 81 d. Note that as illustrated in FIG. 28(B), theregion 530 may be provided in the whole portion between the region 510and the insulating layer 81 d. In such a structure, the photodiode is aburied type photodiode; thus, noise generated at the interface betweensilicon and the insulating layer can be reduced.

In the photodiode provided in the layer 1200, as illustrated in FIG.28(C), a partition may be provided between pixels. The partition can beformed by forming a groove between the pixels and forming the insulatinglayer 81 e to fill the groove. With such a structure, entry ofirradiation light from the oblique direction (stray light) can beprevented.

Note that a material that has a lower refractive index than silicon ispreferably used for the partition. For example, the above-describedmaterial may be used for the insulating layer 81 e. Alternatively, amaterial that easily absorbs light may be used to form the partition.For example, it is also possible to use a resin to which a material suchas a carbon-based black pigment (e.g., carbon black), a titanium-basedblack pigment (e.g., titanium black), an oxide of iron, a compositeoxide of copper and chromium, or a composite oxide of copper, chromium,and zinc is added, or the like.

In the photodiode provided in the layer 1200, as illustrated in FIG.28(D), a region 540 having the same conductivity as the region 520 andhaving a higher dopant concentration than the region 520 may be providedbetween the region 520 and the insulating layer 81 e. With such astructure, carriers can be collected efficiently.

Furthermore, in the photodiode provided in the layer 1200, the region540 may be provided adjacent to the region 530 as illustrated in FIG.28(E). With this structure, the wirings connected to the photodiodes canbe concentrated on one side.

Note that in the structures of FIG. 27 and FIGS. 28(A), (B), (C), astructure in which the wiring 71 is electrically connected to the region520 in every two or more pixels is employed. In the structure of FIG.28(D), a structure in which the wiring 71 is electrically connected tothe region 540 via a region 545 in every two or more pixels is employed.Like the region 540, the region 545 is a region having the sameconductivity as the region 520 and having a higher dopant concentrationthan the region 520. In the structure of FIG. 28(E), a structure inwhich each region 540 is electrically connected to the wiring 71 isemployed.

In the imaging device of one embodiment of the present invention, asillustrated in FIG. 27, the one of the source and the drain of thetransistor 41 is electrically connected to the one electrode of thephotoelectric conversion element PD via a conductor 82. The conductor 82is provided to penetrate the insulating layer 81 b, the conductive layer340, the oxide semiconductor layer 330, the insulating layer 81 c, andthe insulating layer 81 d.

With such a structure, the above-described electrical connection can beobtained without bridge connection using a plurality of conductors 82, aconnection wiring, and the like; thus, the process can be simplified.Furthermore, since an opening does not need to be provided in theinsulating layer 81 c, the insulating layer 81 d, and the like beforethe transistor 41 is formed, the occurrence of process failure due to ashape such as a step can be reduced.

Note that the conductor 82 and the one electrode of the photoelectricconversion element PD may be electrically connected to each other via aconductive layer 550 as illustrated in FIG. 29(A). For the conductivelayer 550, for example, a metal layer of W, Ta, Al, Ti, Ni, stainlesssteel, Pd, or the like can be used. The conductive layer 550 serves asan electrode of the photoelectric conversion element PD and also servesas an etching stopper in forming an opening in which the conductor 82 isto be formed. In addition, the conductive layer 550 also serves as alight-blocking layer for the transistor and a reflective electrode ofthe photoelectric conversion element PD.

Furthermore, as illustrated in FIG. 29(B), the electrical connection maybe obtained not by making the conductor 82 penetrate the conductivelayer 340 and the oxide semiconductor layer 330 but by making theconductor 82 in contact with the top surface and the side surface of theconductive layer 340 and the side surface of the oxide semiconductorlayer 330. With such a structure, a load of an etching step of formingthe opening can be reduced because a metal layer formed of ahardly-etched material is mainly used for the conductive layer 340.

As illustrated in FIG. 29(C), a structure in which the conductor 82 iselectrically connected to a conductive layer 560 that is electricallyconnected to the one electrode of the photoelectric conversion elementPD may be employed. The conductive layer 560 may be formed in the samestep as the conductive layer 373 after an opening is formed in theinsulating layer 81 d. The conductive layer 560 serves as an etchingstopper used in forming an opening in which the conductor 82 is to beformed.

In the layer 1300, a light-blocking layer 1530, an optical conversionlayer 1550 a, a photoelectric conversion layer 1550 b, a photoelectricconversion layer 1550 c, a microlens array 1540, and the like can beprovided.

The insulating layer 81 e is formed in a region in contact with thelayer 1200. As the insulating layer 81 e, a silicon oxide film with ahigh visible-light transmitting property or the like can be used. Inaddition, a silicon nitride film may be stacked as a passivation film.In addition, a structure in which a dielectric film of hafnium oxide orthe like is stacked as an anti-reflection film may be employed.

The light-blocking layer 1530 can be provided on the insulating layer81. The light-blocking layer 1530 is placed between adjacent pixels andhas a function of blocking stray light entering from the obliquedirection. The light-blocking layer 1530 can be a metal layer ofaluminum, tungsten, or the like, or can have a structure in which such ametal layer and a dielectric film having a function of ananti-reflection film are stacked.

The optical conversion layer 1550 a, the photoelectric conversion layer1550 b, and the photoelectric conversion layer 1550 c can be provided onthe insulating layer 81 and the light-blocking layer 1530. For example,color filters of red (R), green (G), blue (B), yellow (Y), cyan (C),magenta (M), and the like are assigned to the optical conversion layer1550 a, the photoelectric conversion layer 1550 b, and the photoelectricconversion layer 1550 c, so that a color image can be obtained.

When filters that block light having a wavelength shorter than or equalto that of visible light are used for the optical conversion layers, aninfrared imaging device can be obtained. Moreover, when filters thatblock light having a wavelength shorter than or equal to that of nearinfrared light are used as the optical conversion layers, a far infraredimaging device can be obtained. Furthermore, when filters that blocklight having a wavelength longer than or equal to that of visible lightare used as the optical conversion layers, an ultraviolet imaging devicecan be obtained.

The microlens array 1540 can be provided on the optical conversion layer1550 a, the photoelectric conversion layer 1550 b, and the photoelectricconversion layer 1550 c. Light passing through individual lensesincluded in the microlens array 1540 passes through the opticalconversion layer 1550 a, the photoelectric conversion layer 1550 b, andthe photoelectric conversion layer 1550 c, and the photoelectricconversion element PD is irradiated with the light.

The structures described in this embodiment can be used in appropriatecombination with the structures described in the other embodiments.

Embodiment 2

In this embodiment, an OS transistor that can be used in one embodimentof the present invention will be described with reference to drawings.In the drawings in this embodiment, some components are enlarged,reduced in size, or omitted for clarity.

FIGS. 30(A), (B), (C) are a top view and cross-sectional views of atransistor 301 of one embodiment of the present invention. FIG. 30(A) isthe top view, and a cross section along the direction of thedashed-dotted line X1-X2 in FIG. 30(A) corresponds to FIG. 30(B). Across section along the direction of the dashed-dotted line Y1-Y2 inFIG. 30(A) corresponds to FIG. 30(C).

In the drawings explained in this embodiment, the direction of thedashed-dotted line X1-X2 is referred to as channel length direction, andthe direction of the dashed-dotted line Y1-Y2 is referred to as channelwidth direction.

The transistor 301 includes an insulating layer 320 in contact with asubstrate 315, the conductive layer 373 in contact with the insulatinglayer 320, the oxide semiconductor layer 330 in contact with theinsulating layer 320, the conductive layer 340 electrically connected tothe oxide semiconductor layer 330, the insulating layer 360 in contactwith the oxide semiconductor layer 330 and the conductive layer 340, andthe conductive layer 370 in contact with the insulating layer 360.

Over the transistor 301, an insulating layer 380 in contact with theoxide semiconductor layer 330, the conductive layer 340, the insulatinglayer 360, and the conductive layer 370 may be provided as necessary.

The oxide semiconductor layer 330 can have a three-layer structure of anoxide semiconductor layer 330 a, an oxide semiconductor layer 330 b, andan oxide semiconductor layer 330 c, for example.

The conductive layer 340 can function as a source electrode layer or adrain electrode layer. The insulating layer 360 and the conductive layer370 can function as a gate insulating film and a gate electrode layer,respectively.

Using the conductive layer 373 as a second gate electrode layer(backgate) enables the increase in on-state current and control of thethreshold voltage. Note that the conductive layer 373 can also serve asa light-blocking layer.

In order to increase the on-state current, for example, the conductivelayer 370 and the conductive layer 373 are made to have the samepotential, and the transistor is driven as a double-gate transistor.Furthermore, in order to control the threshold voltage, a fixedpotential that is different from the potential of the conductive layer370 is supplied to the conductive layer 373.

In the oxide semiconductor layer 330, a region in contact with theconductive layer 340 can function as a source region or a drain region.

Since the oxide semiconductor layer 330 is in contact with theconductive layer 340, an oxygen vacancy is generated in the oxidesemiconductor layer 330, and the region becomes an n-type low-resistanceregion owing to interaction between the oxygen vacancy and hydrogen thatremains in the oxide semiconductor layer 330 or diffuses into the oxidesemiconductor layer 330 from the outside.

Note that functions of a “source” and a “drain” of a transistor aresometimes replaced with each other when a transistor of oppositepolarity is employed or when the direction of current flow is changed ina circuit operation, for example. Therefore, the terms “source” and“drain” can be interchanged with each other in this specification. Inaddition, the term “electrode layer” can be replaced with the term“wiring”.

The conductive layer 340 is in contact with a top surface of the oxidesemiconductor layer 330 and is not in contact with side surfaces of theoxide semiconductor layer 330. This structure facilitates compensationfor an oxygen vacancy in the oxide semiconductor layer 330 with oxygenincluded in the insulating layer 320.

The transistor in one embodiment of the present invention may have astructure illustrated in FIGS. 31(A), (B), (C). FIG. 31(A) is a top viewof a transistor 302, and a cross section along the direction of thedashed-dotted line X1-X2 in FIG. 31(A) corresponds to FIG. 31(B). Across section along the direction of the dashed-dotted line Y1-Y2 inFIG. 31(A) corresponds to FIG. 31(C).

The transistor 302 has a structure similar to that of the transistor 301except that the conductive layer 340 is in contact with the insulatinglayer 320, and that the conductive layer 340 is in contact with sidesurfaces of the oxide semiconductor layer 330.

The transistor in one embodiment of the present invention may have astructure illustrated in FIGS. 32(A), (B), (C). FIG. 32(A) is a top viewof a transistor 303, and a cross section along the direction of thedashed-dotted line X1-X2 in FIG. 32(A) corresponds to FIG. 32(B). Across section along the direction of the dashed-dotted line Y1-Y2 inFIG. 32(A) corresponds to FIG. 32(C).

The transistor 303 has a structure similar to that of the transistor 301except that the oxide semiconductor layer 330 a, the oxide semiconductorlayer 330 b, and the conductive layer 340 are covered with the oxidesemiconductor layer 330 c and the insulating layer 360.

When the oxide semiconductor layer 330 c covers the oxide semiconductorlayer 330 a and the oxide semiconductor layer 330 b, the effect ofcompensating for oxygen in the oxide semiconductor layer 330 a, theoxide semiconductor layer 330 b, and the insulating layer 320 can beenhanced. Moreover, oxidation of the conductive layer 340 by theinsulating layer 380 can be suppressed by the existence of the oxidesemiconductor layer 330 c therebetween.

The transistor in one embodiment of the present invention may have astructure illustrated in FIGS. 33(A), (B), (C). FIG. 33(A) is a top viewof a transistor 304, and a cross section along the direction of thedashed-dotted line X1-X2 in FIG. 33(A) corresponds to FIG. 33(B). Across section along the direction of the dashed-dotted line Y1-Y2 inFIG. 33(A) corresponds to FIG. 33(C).

The transistor 304 has a structure similar to that of the transistor 301except that the oxide semiconductor layer 330 a, the oxide semiconductorlayer 330 b, and the conductive layer 340 are covered with the oxidesemiconductor layer 330 c, and that the conductive layer 370 is coveredwith an insulating layer 410.

The insulating layer 410 can be formed using a material with a blockingproperty against oxygen. For example, a metal oxide such as aluminumoxide can be used as the insulating layer 410. Oxidation of theconductive layer 370 by the insulating layer 380 can be suppressed bythe existence of the insulating layer 410 therebetween.

The transistor 301 to the transistor 304 have a top-gate structureincluding a region where the conductive layer 370 overlaps theconductive layer 340. To reduce parasitic capacitance, the width of theregion in the channel length direction is preferably greater than orequal to 3 nm and less than 300 nm. Since an offset region is not formedin the oxide semiconductor layer 330 in this structure, a transistorwith a large on-state current can be easily formed.

The transistor in one embodiment of the present invention may have astructure illustrated in FIGS. 34(A), (B), (C). FIG. 34(A) is a top viewof a transistor 305, and a cross section along the direction of thedashed-dotted line X1-X2 in FIG. 34(A) corresponds to FIG. 34(B). Across section along the direction of the dashed-dotted line Y1-Y2 inFIG. 34(A) corresponds to FIG. 34(C).

The transistor 305 includes the insulating layer 320 in contact with thesubstrate 315, the conductive layer 373 in contact with the insulatinglayer 320, the oxide semiconductor layer 330 in contact with theinsulating layer 320, the insulating layer 360 in contact with the oxidesemiconductor layer 330, and the conductive layer 370 in contact withthe insulating layer 360.

In the insulating layer 380 serving as an interlayer insulating film, aconductor 400 in contact with a region 431 of the oxide semiconductorlayer 330 and a conductor 401 in contact with a region 432 of the oxidesemiconductor layer 330 are provided. The conductor 400 and theconductor 401 can function as part of the source electrode layer andpart of the drain electrode layer.

An impurity for forming an oxygen vacancy to increase conductivity ispreferably added to the region 431 and the region 432 in the transistor305. As an impurity for forming an oxygen vacancy in an oxidesemiconductor layer, one or more of the following can be used, forexample: phosphorus, arsenic, antimony, boron, aluminum, silicon,nitrogen, helium, neon, argon, krypton, xenon, indium, fluorine,chlorine, titanium, zinc, and carbon. As a method for adding theimpurity, a plasma treatment method, an ion implantation method, an iondoping method, a plasma immersion ion implantation method, or the likecan be used.

When the above element is added as an impurity element to the oxidesemiconductor layer, a bond between a metal element and oxygen in theoxide semiconductor layer is cut, so that an oxygen vacancy is formed.Interaction between an oxygen vacancy in the oxide semiconductor layerand hydrogen that remains in the oxide semiconductor layer or is addedto the oxide semiconductor layer later can increase the conductivity ofthe oxide semiconductor layer.

When hydrogen is added to an oxide semiconductor in which an oxygenvacancy is formed by addition of an impurity element, hydrogen enters anoxygen vacant site and forms a donor level in the vicinity of theconduction band. Consequently, an oxide conductor can be formed. Here,an oxide conductor refers to an oxide semiconductor that has become aconductor.

The transistor 305 has a self-aligned structure that does not include aregion where the conductive layer 370 overlaps the conductive layer 340.A transistor with a self-aligned structure, which has extremely lowparasitic capacitance between a gate electrode layer and source anddrain electrode layers, is suitable for applications that require ahigh-speed operation.

The transistor in one embodiment of the present invention may have astructure illustrated in FIGS. 35(A), (B), (C). FIG. 35(A) is a top viewof a transistor 306, and a cross section along the direction of thedashed-dotted line X1-X2 in FIG. 35(A) corresponds to FIG. 35(B). Across section along the direction of the dashed-dotted line Y1-Y2 inFIG. 35(A) corresponds to FIG. 35(C).

The transistor 306 includes the substrate 315, the insulating layer 320over the substrate 315, the conductive layer 373 in contact with theinsulating layer 320, the oxide semiconductor layer 330 (the oxidesemiconductor layer 330 a, the oxide semiconductor layer 330 b, and theoxide semiconductor layer 330 c) over the insulating layer 320, theconductive layer 340 that is in contact with the oxide semiconductorlayer 330 and is positioned with a spacing, the insulating layer 360 incontact with the oxide semiconductor layer 330 c, and the conductivelayer 370 in contact with the insulating layer 360.

Note that the oxide semiconductor layer 330, the insulating layer 360,and the conductive layer 370 are provided in an opening that is providedin the insulating layer 380 over the transistor 306 and reaches theoxide semiconductor layer 330 a, the oxide semiconductor layer 330 b,and the insulating layer 320.

The transistor in one embodiment of the present invention may have astructure illustrated in FIGS. 36(A), (B), (C). FIG. 36(A) is a top viewof a transistor 307, and a cross section along the direction of thedashed-dotted line X1-X2 in FIG. 36(A) corresponds to FIG. 36(B). Across section along the dashed-dotted line Y1-Y2 in FIG. 36(A)corresponds to FIG. 36(C).

The transistor 307 has a structure similar to that of the transistor 306except that the oxide semiconductor layer 330 a, the oxide semiconductorlayer 330 b, and the conductive layer 340 are covered with the oxidesemiconductor layer 330 c and an oxide semiconductor layer 330 d. Theoxide semiconductor layer 330 d can be formed using the same material asthe oxide semiconductor layer 330 c.

When the oxide semiconductor layer 330 c and the oxide semiconductorlayer 330 d cover the oxide semiconductor layer 330 a and the oxidesemiconductor layer 330 b, the effect of compensating for oxygen in theoxide semiconductor layer 330 a, the oxide semiconductor layer 330 b,and the insulating layer 320 can be enhanced. Moreover, oxidation of theconductive layer 340 by the insulating layer 380 can be suppressed bythe existence of the oxide semiconductor layer 330 d therebetween.

The transistor 306 and the transistor 307 have a structure in which aregion where a conductor serving as a source or a drain overlaps with aconductor serving as a gate electrode is small; thus, parasiticcapacitance can be reduced. Consequently, the transistor 306 and thetransistor 307 are suitable for components of a circuit that requires ahigh-speed operation.

In the transistor of one embodiment of the present invention, the oxidesemiconductor layer 330 may be a single layer as illustrated in FIG.37(A). Furthermore, the oxide semiconductor layer 330 may be formed oftwo layers as illustrated in FIG. 37(B).

The transistor of one embodiment of the present invention may beconfigured not to include the conductive layer 373 as illustrated inFIG. 37(C).

To electrically connect the conductive layer 370 to the conductive layer373 in the transistor of one embodiment of the present invention, forexample, an opening is formed in the insulating layer 320, the oxidesemiconductor layer 330 c, and the insulating layer 360 to reach theconductive layer 373, and the conductive layer 370 is formed to coverthe opening as illustrated in FIG. 37(D).

The transistor of one embodiment of the present invention may beprovided with an insulating layer 345 that is in contact with theconductive layer 340 as illustrated in FIG. 37(E). The insulating layer345 can prevent oxidation of the conductive layer 340.

As the insulating layer 345 and the insulating layer 355, a materialwith a blocking property against oxygen can be used. For example, as theinsulating layer 345 and the insulating layer 355, a metal oxide such asaluminum oxide can be used.

In the transistor of one embodiment of the present invention, theconductive layer 370 may be a stack including a conductive layer 371 anda conductive layer 372, as illustrated in FIG. 37(F).

In the transistor of one embodiment of the present invention, in whichthe conductive layer 340 is provided over the oxide semiconductor layer330, the width (W_(SD)) of the conductive layer 340 may be smaller thanthe width (W_(OS)) of the oxide semiconductor layer 330 as shown in topviews of FIGS. 37(G), (H) (that only show the oxide semiconductor layer330 and the conductive layer 340). When W_(OS)≥W_(SD) is satisfied(W_(SD) is smaller than or equal to W_(OS)), a gate electric field iseasily applied to the entire channel formation region, so thatelectrical characteristics of the transistor can be improved.

Note that FIGS. 37(A) to (F) illustrate variation examples of thetransistor 301; these variation examples can also be applied to theother transistors described in this embodiment.

The transistor with any of the structures in one embodiment of thepresent invention has a structure in which the conductive layer 370 (andthe conductive layer 373) serving as a gate electrode layer electricallysurrounds the oxide semiconductor layer 330 in the channel widthdirection with the insulating layer therebetween. Such a structure canincrease the on-state current and is referred to as a surrounded channel(s-channel) structure.

In the transistor including the oxide semiconductor layer 330 a and theoxide semiconductor layer 330 b and the transistor including the oxidesemiconductor layer 330 a, the oxide semiconductor layer 330 b, and theoxide semiconductor layer 330 c, selecting appropriate materials for thetwo or three layers forming the oxide semiconductor layer 330 allows acurrent to flow in the oxide semiconductor layer 330 b. Since a currentflows through the oxide semiconductor layer 330 b, the current is hardlyinfluenced by interface scattering, leading to a large on-state current.

By using the transistor with the above structure, a semiconductor devicecan have favorable electrical characteristics.

The structures described in this embodiment can be used in appropriatecombination with the structures described in the other embodiments.

Embodiment 3

In this embodiment, components of the transistors shown in Embodiment 2will be described in detail.

As the substrate 315, a glass substrate, a quartz substrate, asemiconductor substrate, a ceramic substrate, a metal substrate with aninsulated surface, or the like can be used. Alternatively, a siliconsubstrate provided with a transistor or a photodiode; or the siliconsubstrate over which an insulating layer, a wiring, a conductorfunctioning as a contact plug, and the like are provided. When ap-channel transistor is formed on a silicon substrate, a siliconsubstrate with n⁻-type conductivity is preferably used. Alternatively,an SOI substrate including an n⁻-type or i-type silicon layer may beused. Moreover, when a p-channel transistor is formed on a siliconsubstrate, a silicon substrate whose surface where the transistor isformed has a (110) plane orientation is preferably used. In the casewhere a p-channel transistor is formed on the (110) plane, the mobilitycan be increased.

The insulating layer 320 can have a function of supplying oxygen to theoxide semiconductor layer 330 as well as a function of preventingdiffusion of impurities from a component of the substrate 315. For thisreason, the insulating layer 320 is preferably an insulating filmcontaining oxygen, and further preferably an insulating film having anoxygen content higher than that in the stoichiometric composition. Theinsulating layer 320 is a film in which the amount of released oxygenwhen converted into oxygen atoms is greater than or equal to 1.0×10¹⁹atoms/cm³ in TDS where heat treatment is performed such that the filmsurface temperature is, for example, higher than or equal to 100° C. andlower than or equal to 700° C., preferably higher than or equal to 100°C. and lower than or equal to 500° C. When the substrate 315 is asubstrate provided with another device, the insulating layer 320 alsohas a function of an interlayer insulating film. In that case, theinsulating layer 320 is preferably subjected to planarization treatmentsuch as CMP treatment so as to have a flat surface.

As the conductive layer 373 functioning as a backgate electrode layer, aconductive film formed using Al, Ti, Cr, Co, Ni, Cu, Y, Zr, Mo, Ru, Ag,Mn, Nd, Sc, Ta, or W can be used, for example. It is also possible touse an alloy of the above material or a conductive nitride of the abovematerial. Furthermore, a stack of a plurality of materials selected fromthe above materials, alloys of the above materials, and conductivenitrides of the above materials can also be used.

For example, the insulating layer 320 can be formed using an oxideinsulating film of aluminum oxide, magnesium oxide, silicon oxide,silicon oxynitride, gallium oxide, germanium oxide, yttrium oxide,zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide,tantalum oxide, or the like; a nitride insulating film of siliconnitride, silicon nitride oxide, aluminum nitride, aluminum nitrideoxide, or the like; or a mixed material of these. The insulating layer320 may be a stack of any of the above materials.

The oxide semiconductor layer 330 can have a three-layer structure inwhich the oxide semiconductor layer 330 a, the oxide semiconductor layer330 b, and the oxide semiconductor layer 330 c are stacked in this orderfrom the insulating layer 320 side.

Note that when the oxide semiconductor layer 330 is a single layer, alayer corresponding to the oxide semiconductor layer 330 b described inthis embodiment is used.

In the case of consisting of two layers, the oxide semiconductor layer330 can be a stack in which a layer corresponding to the oxidesemiconductor layer 330 a and a layer corresponding to the oxidesemiconductor layer 330 b are stacked in this order from the insulatinglayer 320 side. In this structure, the positions of the oxidesemiconductor layers 330 a and 330 b can be interchanged.

For the oxide semiconductor layer 330 b, an oxide semiconductor whoseelectron affinity (energy from the vacuum level to the conduction bandminimum) is higher than those of the oxide semiconductor layer 330 a andthe oxide semiconductor layer 330 c is used, for example.

In such a structure, when a voltage is applied to the conductive layer370, a channel is formed in the oxide semiconductor layer 330 b whoseenergy at the conduction band minimum is the lowest in the oxidesemiconductor layer 330. Therefore, the oxide semiconductor layer 330 bcan be regarded as having a region serving as a semiconductor, while theoxide semiconductor layer 330 a and the oxide semiconductor layer 330 ccan be regarded as having a region serving as an insulator or asemi-insulator.

An oxide semiconductor that can be used for the oxide semiconductorlayer 330 a, the oxide semiconductor layer 330 b, and the oxidesemiconductor layer 330 c preferably contains at least In or Zn.Moreover, both In and Zn are preferably contained. In addition to them,a stabilizer such as Al, Ga, Y, or Sn is preferably contained in orderto reduce variations in electrical characteristics of the transistorusing the oxide semiconductor.

For the oxide semiconductor layer 330 a and the oxide semiconductorlayer 330 c, an In—Ga—Zn oxide with In:Ga:Zn=1:3:2, 1:3:3, 1:3:4, 1:3:6,1:4:5, 1:6:4, or 1:9:6 (in an atomic ratio) or with an atomic ratioclose to those ratios can be used, for example. For the oxidesemiconductor layer 330 b, an In-Ga—Zn oxide with an In:Ga:Zn=1:1:1,2:1:3, 5:5:6, 3:1:2, 3:1:4, 5:1:6, or 4:2:3 (in an atomic ratio) or withan atomic ratio close to those ratios or the like can be used.

The oxide semiconductor layer 330 a, the oxide semiconductor layer 330b, and the oxide semiconductor layer 330 c may include crystal parts.For example, when crystals with c-axis alignment are used, thetransistor can have stable electrical characteristics. Moreover,crystals with c-axis alignment are resistant to bending; thus, usingsuch crystals can improve the reliability of a semiconductor deviceusing a flexible substrate.

The conductive layer 340 functioning as a source electrode layer or adrain electrode layer can be formed with a single layer or a stackedlayer of a material selected from Al, Cr, Cu, Ta, Ti, Mo, W, Ni, Mn, Nd,Sc, and alloys or conductive nitrides of these metal materials, forexample. Using tantalum nitride, which is a conductive nitride, canprevent oxidation. It is also possible to use a stack of any of theabove material and Cu or an alloy such as Cu—Mn, which has lowresistance.

The above material is capable of extracting oxygen from an oxidesemiconductor layer. Thus, in a region of the oxide semiconductor layerthat is in contact with the above material, oxygen is released from theoxide semiconductor layer and an oxygen vacancy is formed. Hydrogenslightly contained in the layer and the oxygen vacancy are bonded toeach other, so that the region is markedly changed to an n-type region.Accordingly, the n-type region can serve as a source or a drain of thetransistor.

As the insulating layer 360 functioning as a gate insulating film, aninsulating film containing one or more kinds of aluminum oxide,magnesium oxide, silicon oxide, silicon oxynitride, silicon nitrideoxide, silicon nitride, gallium oxide, germanium oxide, yttrium oxide,zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, andtantalum oxide can be used. The insulating layer 360 may be a stack ofthe above materials.

As the insulating layer 320 and the insulating layer 360 which are incontact with the oxide semiconductor layer 330, a film that releases asmall amount of nitrogen oxide is preferably used. When the oxidesemiconductor is in contact with an insulating layer that releases alarge amount of nitrogen oxide, the density of states caused by nitrogenoxide becomes high in some cases.

By using the above insulating films as the insulating layer 320 and theinsulating layer 360, a shift in the threshold voltage of the transistorcan be reduced, which leads to reduced fluctuations in the electricalcharacteristics of the transistor.

As the conductive layer 370 functioning as a gate electrode layer, aconductive film of Al, Ti, Cr, Co, Ni, Cu, Y, Zr, Mo, Ru, Ag, Mn, Nd,Sc, Ta, W, or the like can be used, for example. Alloys of the abovematerials or conductive nitrides of the above materials can also beused. A stack containing a plurality of materials selected from theabove materials, the alloys of the above materials, and the conductivenitrides of the above materials can also be used. Tungsten, a stack oftungsten and titanium nitride, or a stack of tungsten and tantalumnitride, or the like can be used typically. Alternatively, Cu or analloy such as Cu—Mn, which has low resistance, or a stack of the abovematerial and Cu or an alloy such as Cu—Mn may be used. For example,titanium nitride can be used for the conductive layer 371 and tungstencan be used for the conductive layer 372 to form the conductive layer370.

As the conductive layer 370, an oxide conductive layer of In—Ga—Znoxide, zinc oxide, indium oxide, tin oxide, indium tin oxide, or thelike may be used. When the oxide conductive layer is provided in contactwith the insulating layer 360, oxygen can be supplied from the oxideconductive layer to the oxide semiconductor layer 330.

As the insulating layer 380, an insulating film containing one or morekinds of magnesium oxide, silicon oxide, silicon oxynitride, siliconnitride oxide, silicon nitride, gallium oxide, germanium oxide, yttriumoxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide,and tantalum oxide can be used. The insulating layer may be a stack ofthe above materials.

Here, like the insulating layer 320, the insulating layer 380 preferablycontains oxygen more than that in the stoichiometric composition. Oxygenreleased from the insulating layer 380 can be diffused into the channelformation region in the oxide semiconductor layer 330 through theinsulating layer 360, so that oxygen vacancies formed in the channelformation region can be filled with oxygen. In this manner, stableelectrical characteristics of the transistor can be achieved.

A film having an effect of blocking impurities is preferably providedover the transistor or the insulating layer 380. The blocking film canbe a silicon nitride film, an aluminum nitride film, an aluminum oxidefilm, or the like.

A nitride insulating film has a function of blocking moisture and thelike and can improve the reliability of the transistor. An aluminumoxide film has a high blocking effect of preventing penetration of bothoxygen and impurities such as hydrogen and moisture. Accordingly, duringand after the manufacturing process of the transistor, the aluminumoxide film can suitably function as a protective film that has effectsof preventing entry of impurities such as hydrogen and moisture into theoxide semiconductor layer 330, preventing release of oxygen from theoxide semiconductor layer, and preventing unnecessary release of oxygenfrom the insulating layer 320.

High integration of a semiconductor device requires transistorminiaturization. However, miniaturization of a transistor tends to causedeterioration of electrical characteristics of the transistor. Forexample, a decrease in channel width causes a reduction in on-statecurrent.

The transistor of one embodiment of the present invention can have astructure in which the oxide semiconductor layer 330 c covers the oxidesemiconductor layer 330 b in which the channel is formed. In thisstructure, the channel formation layer is not in contact with the gateinsulating film; thus, scattering of carriers formed at the interfacebetween the channel formation layer and the gate insulating film can bereduced, and the on-state current of the transistor can be increased.

In the transistor of one embodiment of the present invention, asdescribed above, the gate electrode layer (the conductive layer 370) isformed to electrically surround the oxide semiconductor layer 330 in thechannel width direction. Accordingly, a gate electric field is appliedto the oxide semiconductor layer 330 from a direction perpendicular toits side surface in addition to a gate electric field from a directionperpendicular to its top surface. In other words, a gate electric fieldis applied to the entire channel formation layer and effective channelwidth is increased, leading to a further increase in the on-statecurrent.

Although the variety of films such as the metal films, the semiconductorfilms, and the inorganic insulating films described in this embodimentcan be formed typically by a sputtering method or a plasma-enhanced CVDmethod, such films may be formed by another method such as a thermal CVDmethod. Examples of a thermal CVD method include an MOCVD (metal organicchemical vapor deposition) method and an ALD (atomic layer deposition)method.

A thermal CVD method, which is a film deposition method that does notuse plasma, has an advantage that no defect due to plasma damage isgenerated.

Film formation by a thermal CVD method may be performed in such a mannerthat a source gas and an oxidizer are supplied to a chamber at a time,the pressure in the chamber is set to an atmospheric pressure or areduced pressure, and reaction is performed in the vicinity of thesubstrate or over the substrate to cause deposition over the substrate.

Film formation by an ALD method is performed in such a manner that thepressure in a chamber is set to an atmospheric pressure or a reducedpressure, source gases for reaction are introduced into the chamber andreacted, and then this sequence is repeated. An inert gas (e.g., argonor nitrogen) may be introduced as a carrier gas together with the sourcegases. For example, two or more kinds of source gases may besequentially supplied to the chamber. In that case, after reaction of afirst source gas, an inert gas is introduced, and then a second sourcegas is introduced so that the source gases are not mixed. Alternatively,the first source gas may be exhausted by vacuum evacuation instead ofintroduction of an inert gas, and then the second source gas may beintroduced. The first source gas is adsorbed on the surface of thesubstrate and reacted to form a first layer, and then, the second sourcegas introduced later is adsorbed on the first layer and reacted. As aresult, a second layer is stacked over the first layer, so that a thinfilm is formed. The sequence of the gas introduction is controlled andrepeated a plurality of times until a desired thickness is obtained,whereby a thin film with excellent step coverage can be formed. Thethickness of the thin film can be adjusted by the number of repetitionsof the sequence of gas introduction; therefore, ALD makes it possible toaccurately adjust a film thickness and thus is suitable formanufacturing a minute FET.

A facing-target-type sputtering apparatus can be used to form an oxidesemiconductor layer. Deposition using a facing-target-type sputteringapparatus can be referred to as VDSP (vapor deposition SP).

When an oxide semiconductor layer is deposited using afacing-target-type sputtering apparatus, plasma damage to the oxidesemiconductor layer at the time of deposition can be reduced. Thus,oxygen vacancies in the film can be reduced. In addition, the use of thefacing-target-type sputtering apparatus enables low-pressure deposition.Accordingly, the concentration of impurities (e.g., hydrogen, a rare gas(e.g., argon), water, and the like) in a deposited oxide semiconductorlayer can be lowered.

The structures described in this embodiment can be used in appropriatecombination with the structures described in the other embodiments.

Embodiment 4

In this embodiment, the material of an oxide semiconductor that can beused for one embodiment of the present invention will be described.

An oxide semiconductor preferably contains at least indium or zinc. Inparticular, indium and zinc are preferably contained. In addition,aluminum, gallium, yttrium, tin, or the like is preferably contained.Furthermore, one kind or a plurality of kinds selected from boron,silicon, titanium, iron, nickel, germanium, zirconium, molybdenum,lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, orthe like may be contained.

Here, the case where an oxide semiconductor contains indium, an elementM, and zinc is considered. The element M is aluminum, gallium, yttrium,tin, or the like. As the other elements that can be used as the elementM, there are boron, silicon, titanium, iron, nickel, germanium,zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum,tungsten, magnesium, and the like. Note that a plurality of the aboveelements may be used in combination as the element M.

First, preferred ranges of the atomic ratio of indium, the element M,and zinc contained in an oxide semiconductor of the present inventionare described with reference to FIG. 38(A),

FIG. 38(B), and FIG. 38(C). Note that the atomic ratio of oxygen is notshown in FIG. 38. The terms of the atomic ratio of indium, the elementM, and zinc contained in the oxide semiconductor are denoted by [In],[M], and [Zn], respectively.

In FIG. 38(A), FIG. 38(B), and FIG. 38(C), broken lines indicate a linewhere the atomic ratio [In]:[M]:[Zn]=(1+α):(1−α):1 (−1≤α≤1), a linewhere the atomic ratio [In]:[M]:[Zn]=(1+α):(1−α):2, a line where theatomic ratio [In]:[M]:[Zn]=(1+α):(1−α):3, a line where the atomic ratio[In]:[M]:[Zn]=(1+α):(1−α):4, and a line where the atomic ratio[In]:[M]:[Zn]=(1+α):(1−α):5.

Dashed-dotted lines indicate a line where the atomic ratio [In]:[M]:[Zn]=1:1:β (β≥0), a line where the atomic ratio [In]:[M]:[Zn]=1:2:β, aline where the atomic ratio [In]:[M]:[Zn]=1:3:β, a line where the atomicratio [In]:[M]:[Zn] is 1:4:β, a line where the atomic ratio[In]:[M]:[Zn] is 2:1:β and a line where the atomic ratio[In]:[M]:[Zn]=5:1:β.

A dashed double-dotted line indicates a line where the atomic ratio[In]:[M]:[Zn]=(1+γ):2:(1−γ) (−1≤γ≤1). The oxide semiconductorillustrated in FIG. 38 with an atomic ratio of [In]:[M]:[Zn]=0:2:1 or anatomic ratio that is in the neighborhood is likely to have a spinelcrystal structure.

FIG. 38(A) and FIG. 38(B) show examples of the preferred ranges of theatomic ratio of indium, the element M, and zinc contained in an oxidesemiconductor of one embodiment of the present invention.

FIG. 39 shows an example of the crystal structure of InMZnO₄ having[In]:[M]:[Zn]=1:1:1. Note that FIG. 39 illustrates the crystal structureof InMZnO₄ observed from a direction parallel to a b-axis. Note that ametal element in a layer that contains M, Zn, and oxygen (hereinafter,referred to as an “(M,Zn) layer”) in FIG. 39 represents the element M orzinc. In that case, the proportion of the element M is the same as theproportion of zinc. The element M and zinc can be replaced with eachother, and their arrangement is random.

InMZnO₄ has a layered crystal structure (also referred to as a layeredstructure) and includes two (M,Zn) layers that contain the element M,zinc, and oxygen for every single layer that contains indium and oxygen(hereinafter, referred to as an In layer), as illustrated in FIG. 39.

Indium and the element M can be replaced with each other. Therefore,when the element Min the (M,Zn) layer is replaced with indium, the layercan also be referred to as an (In,M,Zn) layer. In that case, a layeredstructure that contains two (In,M,Zn) layers for every single In layeris obtained.

An oxide semiconductor whose atomic ratio [In]:[M]:[Zn]=1:1:2 has alayered structure that contains three (M,Zn) layers for every single Inlayer. In other words, if [Zn] is higher than [In] and [M], theproportion of the (M,Zn) layer to the In layer becomes higher when theoxide semiconductor is crystallized.

Note that in the case where the number of (M,Zn) layers with respect toone In layer is not an integer in the oxide semiconductor, the oxidesemiconductor might have a plurality of kinds of layered structureswhere the number of (M,Zn) layers with respect to one In layer is aninteger. For example, in the case of [In]:[M]:[Zn]=1:1:1.5, the oxidesemiconductor might have a layered structure in which a layeredstructure containing two (M,Zn) layers for every single In layer and alayered structure containing three (M,Zn) layers for every single Inlayer are mixed.

For example, in the case where the oxide semiconductor is deposited witha sputtering apparatus, a film having an atomic ratio deviated from theatomic ratio of a target is formed. In particular, [Zn] in the filmmight be smaller than [Zn] in the target depending on the substratetemperature in deposition.

A plurality of phases (e.g., two phases or three phases) exist in theoxide semiconductor in some cases. For example, with an atomic ratiothat is close to an atomic ratio [In]:[M]:[Zn]=0:2:1, two phases, thatis, a spinel crystal structure and a layered crystal structure arelikely to exist. In addition, with an atomic ratio that is close to anatomic ratio [In]:[M]:[Zn]=1:0:0, two phases, that is, a bixbyitecrystal structure and a layered crystal structure are likely to exist.In the case where a plurality of phases exist in the oxidesemiconductor, a grain boundary might be formed between differentcrystal structures.

In addition, the oxide semiconductor containing a higher proportion ofindium can have high carrier mobility (electron mobility). This isbecause in an oxide semiconductor containing indium, the element M, andzinc, the s orbital of heavy metal mainly contributes to carriertransfer, and when the proportion of indium is increased, an overlappingregion of the s orbitals is increased; therefore, an oxide semiconductorcontaining a high proportion of indium has higher carrier mobility thanan oxide semiconductor having a low proportion of indium.

In contrast, when the indium content and the zinc content in an oxidesemiconductor become lower, carrier mobility becomes lower. Thus, withan atomic ratio of [In]:[M]:[Zn]=0:1:0 and an atomic ratio in thevicinity thereof (e.g., a region C in FIG. 38(C)), insulationperformance becomes high.

Accordingly, an oxide semiconductor of one embodiment of the presentinvention preferably has an atomic ratio represented by a region A inFIG. 38(A), which facilitates a layered structure with high carriermobility and a few grain boundaries.

A region B in FIG. 38(B) represents [In]:[M]:[Zn]=4:2:3 to 4.1 and thevicinity thereof. The vicinity includes an atomic ratio of[In]:[M]:[Zn]=5:3:4. An oxide semiconductor with an atomic ratiorepresented by the region B is an excellent oxide semiconductor that hasparticularly high crystallinity and high carrier mobility.

Note that conditions for forming a layered structure of an oxidesemiconductor are not uniquely determined by the atomic ratio. There isa difference in the degree of difficulty in forming a layered structureamong atomic ratios. Even with the same atomic ratio, whether a layeredstructure is formed or not depends on a formation condition. Therefore,the illustrated regions are regions representing atomic ratios withwhich an oxide semiconductor has a layered structure, and boundaries ofthe regions A to C are not clear.

Next, the case where the oxide semiconductor is used for a transistor isdescribed.

Note that when the oxide semiconductor is used for a transistor, carrierscattering or the like at a grain boundary can be reduced; thus, thetransistor can have high field-effect mobility. In addition, thetransistor can have high reliability.

An oxide semiconductor with low carrier density is preferably used forthe transistor. For example, an oxide semiconductor whose carrierdensity is lower than 8×10¹¹/cm³, preferably lower than 1×10¹¹/cm³,further preferably lower than 1×10¹⁰/cm³, and greater than or equal to1×10⁻⁹/cm³ is used.

A highly purified intrinsic or substantially highly purified intrinsicoxide semiconductor has few carrier generation sources and thus can havea low carrier density. A highly purified intrinsic or substantiallyhighly purified intrinsic oxide semiconductor has a low density ofdefect states and accordingly has a low density of trap states in somecases.

Charges trapped by the trap states in the oxide semiconductor take along time to be released and may behave like fixed charges. Thus, thetransistor whose channel region is formed in the oxide semiconductorhaving a high density of trap states has unstable electricalcharacteristics in some cases.

In order to obtain stable electrical characteristics of the transistor,it is effective to reduce the concentration of impurities in the oxidesemiconductor. In order to reduce the concentration of impurities in theoxide semiconductor, the concentration of impurities in a film that isadjacent to the oxide semiconductor is preferably reduced. As examplesof the impurities, hydrogen, nitrogen, alkali metal, alkaline earthmetal, iron, nickel, silicon, and the like are given.

Here, the influence of impurities in the oxide semiconductor isdescribed.

When silicon or carbon that is one of Group 14 elements is contained inthe oxide semiconductor, defect states are formed in the oxidesemiconductor. Thus, the concentration of silicon or carbon in the oxidesemiconductor and around an interface with the oxide semiconductor(measured by secondary ion mass spectrometry (SIMS)) is set lower thanor equal to 2×10¹⁸ atoms/cm³, and preferably lower than or equal to2×10¹⁷ atoms/cm³.

When the oxide semiconductor contains alkali metal or alkaline earthmetal, defect states are formed and carriers are generated, in somecases. Thus, a transistor including an oxide semiconductor that containsalkali metal or alkaline earth metal is likely to have normally-oncharacteristics. Therefore, it is preferable to reduce the concentrationof alkali metal or alkaline earth metal in the oxide semiconductor.Specifically, the concentration of alkali metal or alkaline earth metalin the oxide semiconductor measured by SIMS is set lower than or equalto 1×10¹⁸ atoms/cm³, and preferably lower than or equal to 2×10¹⁶atoms/cm³.

When the oxide semiconductor contains nitrogen, the oxide semiconductoreasily becomes n-type by generation of electrons serving as carriers andan increase of carrier density. Thus, a transistor in which an oxidesemiconductor containing nitrogen is used as the semiconductor is likelyto have normally-on characteristics. For this reason, nitrogen in theoxide semiconductor is preferably reduced as much as possible; forexample, the concentration of nitrogen in the oxide semiconductor, whichis measured by SIMS, is lower than 5×10¹⁹ atoms/cm³, preferably lowerthan or equal to 5×10¹⁸ atoms/cm³, further preferably lower than orequal to 1×10¹⁸ atoms/cm³, still further preferably lower than or equalto 5×10¹⁷ atoms/cm³.

Hydrogen contained in an oxide semiconductor reacts with oxygen bondedto a metal atom to be water, and thus forms an oxygen vacancy, in somecases. Entry of hydrogen into the oxygen vacancy generates an electronserving as a carrier in some cases. Furthermore, in some cases, bondingof part of hydrogen to oxygen bonded to a metal atom causes generationof an electron serving as a carrier. Thus, a transistor including anoxide semiconductor that contains hydrogen is likely to have normally-oncharacteristics. Accordingly, it is preferable that hydrogen in theoxide semiconductor be reduced as much as possible. Specifically, thehydrogen concentration of the oxide semiconductor measured by SIMS isset lower than 1×10²⁰ atoms/cm³, preferably lower than 1×10¹⁹ atoms/cm³,further preferably lower than 5×10¹⁸ atoms/cm³, and still furtherpreferably lower than 1×10¹⁸ atoms/cm³.

When an oxide semiconductor with sufficiently reduced impurities is usedfor a channel formation region in a transistor, the transistor can havestable electrical characteristics.

Next, the case where the oxide semiconductor has a two-layer structureor a three-layer structure is described. A band diagram of a stackedstructure of an oxide semiconductor S1, an oxide semiconductor S2, andan oxide semiconductor S3 and insulators that are in contact with thestacked structure and a band diagram of a stacked structure of the oxidesemiconductor S2 and the oxide semiconductor S3 and insulators that arein contact with the stacked structure are described with reference toFIG. 40.

FIG. 40(A) is an example of a band diagram of a stacked structureincluding an insulator I1, the oxide semiconductor S1, the oxidesemiconductor S2, the oxide semiconductor S3, and an insulator 12 in afilm thickness direction. FIG. 40(B) is an example of a band diagram ofa stacked structure including the insulator I1, the oxide semiconductorS2, the oxide semiconductor S3, and the insulator 12 in a film thicknessdirection. Note that for easy understanding, the band diagrams show theenergy levels of the conduction band minimum (Ec) of the insulator I1,the oxide semiconductor S1, the oxide semiconductor S2, the oxidesemiconductor S3, and the insulator 12.

The energy levels of the conduction band minimum of the oxidesemiconductor S1 and the oxide semiconductor S3 are closer to the vacuumlevel than that of the oxide semiconductor S2. Typically, a differencein energy level between the conduction band minimum of the oxidesemiconductor S2 and the conduction band minimums of the oxidesemiconductors S1 and S3 is preferably greater than or equal to 0.15 eVor greater than or equal to 0.5 eV, and less than or equal to 2 eV orless than or equal to 1 eV. That is, it is preferable that the electronaffinity of the oxide semiconductor S2 be higher than the electronaffinities of the oxide semiconductors S1 and S3, and the differencebetween the electron affinities of the oxide semiconductors S1 and S3and the electron affinity of the oxide semiconductor S2 be greater thanor equal to 0.15 eV or greater than or equal to 0.5 eV, and less than orequal to 2 eV or less than or equal to 1 eV.

As illustrated in FIG. 40(A) and FIG. 40(B), the energy level of theconduction band minimum of the oxide semiconductor S1, the oxidesemiconductor S2, and the oxide semiconductor S3 is gradually varied. Inother words, it is continuously varied or continuously connected. Inorder to obtain such a band diagram, the density of defect states in amixed layer formed at an interface between the oxide semiconductor S1and the oxide semiconductor S2 or an interface between the oxidesemiconductor S2 and the oxide semiconductor S3 is preferably made low.

Specifically, when the oxide semiconductors S1 and S2 or the oxidesemiconductors S2 and S3 contain the same element (as a main component)in addition to oxygen, a mixed layer with a low density of defect statescan be formed. For example, in the case where the oxide semiconductor S2is an In—Ga—Zn oxide semiconductor, it is preferable to use an In—Ga—Znoxide semiconductor, a Ga—Zn oxide semiconductor, gallium oxide, or thelike as the oxide semiconductor S1 and the oxide semiconductor S3.

At this time, the oxide semiconductor S2 serves as a main carrier path.Since the density of defect states at the interface between the oxidesemiconductors S1 and S2 and the interface between the oxidesemiconductors S2 and S3 can be made low, the influence of interfacescattering on carrier conduction is small, and a high on-state currentcan be obtained.

When an electron is trapped in a trap state, the trapped electronbehaves like a fixed charge; thus, the threshold voltage of thetransistor is shifted in a positive direction. The oxide semiconductorS1 and the oxide semiconductor S3 can make the trap state apart from theoxide semiconductor S2. This structure can prevent the positive shift ofthe threshold voltage of the transistor.

Materials whose conductivities are sufficiently lower than that of theoxide semiconductor S2 are used for the oxide semiconductor S1 and theoxide semiconductor S3. In that case, the oxide semiconductor S2, theinterface between the oxide semiconductor S2 and the oxide semiconductorS1, and the interface between the oxide semiconductor S2 and the oxidesemiconductor S3 mainly function as a channel region. For example, oxidesemiconductors with the atomic ratios represented by the region C inFIG. 38(C), which enable high insulation performance, can be used as theoxide semiconductor S1 and the oxide semiconductor S3. Note that theregion C in FIG. 38(C) represents the atomic ratio of[In]:[M]:[Zn]=0:1:0 or the vicinity thereof.

In the case where an oxide semiconductor with the atomic ratiorepresented by the region A is used as the oxide semiconductor S2, it isparticularly preferable to use oxide semiconductors with atomic ratioswhere [M]/[In] is greater than or equal to 1, preferably greater than orequal to 2 as the oxide semiconductor S1 and the oxide semiconductor S3.In addition, an oxide semiconductor having [M]/([Zn]+[In]) greater thanor equal to 1, which enables sufficiently high insulation performance,is suitably used as the oxide semiconductor S3.

The structures described in this embodiment can be used in appropriatecombination with the structures described in the other embodiments.

Embodiment 5

In this embodiment, specific examples of the mobile unit or the like ofone embodiment of the present invention will be described with referenceto the drawings.

FIG. 41(A) illustrates an automobile 601. The automobile 601 includes awindow portion 611. The mobile unit of one embodiment of the presentinvention can be used for the automobile 601 including the windowportion 611. With this structure, the automobile 601 can be a noveltythat can reduce the glare perceived by a driver of the automobile 601even in the case where an oncoming car is emitting high beams.

FIG. 41(B) illustrates a bus 602. The bus 602 includes the windowportion 611. The mobile unit of one embodiment of the present inventioncan be used for the bus 602 including the window portion 611. With thisstructure, the bus 602 can be a novelty that can reduce the glareperceived by a driver of the bus 602 even in the case where an oncomingcar is emitting high beams.

FIG. 41(C) illustrates a train 603. The train 603 includes the windowportion 611. The mobile unit of one embodiment of the present inventioncan be used for the train 603 including the window portion 611. Withthis structure, the train 603 can be a novelty that can reduce the glareperceived by a driver of the train 603 even in the case where anoncoming train is emitting high beams.

FIG. 41(D) illustrates a helmet 604. An occupant wears the helmet 604for safety in driving a motorcycle or the like, which is a mobile unit.The helmet 604 includes the window portion 611. The mobile unit of oneembodiment of the present invention can be used for the helmet 604including the window portion 611. With this structure, the helmet 604can be a novelty that can reduce the glare perceived by a driver of themotorcycle or the like who is wearing the helmet 604 even in the casewhere an oncoming car is emitting high beams. Note that the helmet maybe replaced with other structures as long as they are glasses-typeobjects to wear.

The structures described in this embodiment can be used in appropriatecombination with the structures described in the other embodiments.

REFERENCE NUMERALS

11 imaging element, 20 pixel, 20 a pixel, 20 b pixel, 20 c pixel, 20 dpixel, 20 e pixel, 20 f pixel, 20 g pixel, 21 pixel array, 22 circuit,23 circuit, 24 circuit, 25 circuit, 30 circuit, 41 transistor, 42transistor, 43 transistor, 44 transistor, 45 transistor, 61 wiring, 61 awiring, 61 d wiring, 62 wiring, 63 wiring, 64 wiring, 65 wiring, 71wiring, 72 wiring, 73 wiring, 75 wiring, 76 wiring, 77 wiring, 78wiring, 81 insulating layer, 81 a insulating layer, 81 b insulatinglayer, 81 c insulating layer, 81 d insulating layer, 81 e insulatinglayer, 82 conductor, 91 wiring, 100 mobile unit, 101 control circuit,102 window portion, 103 sensor, 103L sensor, 103R sensor, 104 sensor,104L sensor, 104R sensor, 105 sensor, 111 sensor circuit, 112 memorycircuit, 113 arithmetic circuit, 114 brake, 120 driver, 121 eye, 121Lleft eye, 121R right eye, 122 region, 123 sensor, 123L sensor, 123Rsensor, 130 oncoming car, 131 headlight, 132 high beam, 133 low beam,134 road surface, 135 pedestrian, 140 region, 150 seat, 151 sensor, 152sun visor, 160 car behind, 161 headlight, 162 high beam, 164 sensor,164L sensor, 164R sensor, 200 liquid crystal panel, 201A substrate, 201Bsubstrate, 201C substrate, 202 liquid crystal, 202A liquid crystal, 202Bliquid crystal, 203A polarizing plate, 203B polarizing plate, 211windshield, 212 front door glass, 213 rear door glass, 213B rear doorglass, 214 back glass, 214B back glass, 301 transistor, 302 transistor,303 transistor, 304 transistor, 305 transistor, 306 transistor, 307transistor, 315 substrate, 320 insulating layer, 330 oxide semiconductorlayer, 330 a oxide semiconductor layer, 330 b oxide semiconductor layer,330 c oxide semiconductor layer, 330 d oxide semiconductor layer, 340conductive layer, 345 insulating layer, 355 insulating layer, 360insulating layer, 370 conductive layer, 371 conductive layer, 372conductive layer, 373 conductive layer, 380 insulating layer, 400conductor, 401 conductor, 410 insulating layer, 431 region, 432 region,510 region, 520 region, 530 region, 540 region, 545 region, 550conductive layer, 560 conductive layer, 601 automobile, 602 bus, 603train, 604 helmet, 611 window portion, 1100 layer, 1200 layer, 1300layer, 1530 light-blocking layer, 1540 microlens array, 1550 a opticalconversion layer, 1550 b photoelectric conversion layer, 1550 cphotoelectric conversion layer

What is claimed is:
 1. A mobile unit comprising: a first sensor; asecond sensor; and a window portion, wherein the first sensor isconfigured to sense a position of eyes of a driver, wherein the secondsensor is configured to sense a region that is to be irradiated with abeam by an oncoming car, and wherein a light transmittance of the windowportion is configured to be decreased on the basis of outputs of thefirst sensor and the second sensor.
 2. The mobile unit according toclaim 1, wherein the first sensor is positioned inside the mobile unit,and wherein the second sensor is positioned outside the mobile unit. 3.The mobile unit according to claim 1, wherein a dynamic range of thesecond sensor is higher than a dynamic range of the first sensor, andwherein a frame frequency of the second sensor is higher than a framefrequency of the first sensor.
 4. The mobile unit according to claim 1,wherein the first sensor comprises a first imaging element, wherein thesecond sensor comprises a second imaging element, wherein the firstimaging element is configured to be operated by a rolling shuttermethod, and wherein the second imaging element is configured to beoperated by a global shutter method.
 5. A mobile unit comprising: afirst sensor; a second sensor; an arithmetic circuit; and a windowportion, wherein the first sensor is configured to output a first signalto the arithmetic circuit, wherein the second sensor is configured tooutput a second signal to the arithmetic circuit, wherein the arithmeticcircuit is configured to output a third signal to the window portion inaccordance with the first signal and the second signal, wherein thefirst signal comprises data on a position of eyes of a driver, whereinthe second signal comprises data on a region that is to be irradiatedwith a beam by an oncoming car, wherein the third signal comprises dataon a light transmittance of the window portion, and wherein the lighttransmittance of the window portion is configured to be decreased on thebasis of the third signal.
 6. The mobile unit according to claim 5,wherein the first sensor is positioned inside the mobile unit, andwherein the second sensor is positioned outside the mobile unit.
 7. Themobile unit according to claim 5, wherein a dynamic range of the secondsensor is higher than a dynamic range of the first sensor, and wherein aframe frequency of the second sensor is higher than a frame frequency ofthe first sensor.
 8. The mobile unit according to claim 5, wherein thefirst sensor comprises a first imaging element, wherein the secondsensor comprises a second imaging element, wherein the first imagingelement is configured to be operated by a rolling shutter method, andwherein the second imaging element is configured to be operated by aglobal shutter method.